BLF7G27LS-75P,112 NXP Semiconductors, BLF7G27LS-75P,112 Datasheet

TRANSISTOR PWR LDMOS SOT1121B

BLF7G27LS-75P,112

Manufacturer Part Number
BLF7G27LS-75P,112
Description
TRANSISTOR PWR LDMOS SOT1121B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF7G27LS-75P,112

Package / Case
SOT-1121B
Transistor Type
LDMOS
Frequency
2.3GHz ~ 2.4GHz
Gain
17dB
Voltage - Rated
65V
Current Rating
18A
Current - Test
650mA
Voltage - Test
28V
Power - Output
12W
Resistance Drain-source Rds (on)
0.29 Ohms
Configuration
Single
Drain-source Breakdown Voltage
65 V
Continuous Drain Current
18 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Noise Figure
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
75 W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2700 MHz.
Table 1.
Typical RF performance at T
[1]
Mode of operation
IS-95
BLF7G27L-75P;
BLF7G27LS-75P
Power LDMOS transistor
Rev. 2 — 14 July 2010
Excellent ruggedness
High efficiency
Low R
Designed for broadband operation (2300 MHz to 2700 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2300 MHz to 2700 MHz frequency range
Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
th
Typical performance
providing excellent thermal stability
f
(MHz)
2300 to 2400
case
= 25
C in a common source class-AB production test circuit.
I
(mA)
650
Dq
V
(V)
28
DS
P
(W)
12
L(AV)
G
(dB)
17
p
Product data sheet
(%)
26
D
ACPR
(dBc)
46
[1]
885k

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BLF7G27LS-75P,112 Summary of contents

Page 1

... BLF7G27L-75P; BLF7G27LS-75P Power LDMOS transistor Rev. 2 — 14 July 2010 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2700 MHz. Table 1. Typical RF performance at T Mode of operation IS-95 [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin BLF7G27L-75P (SOT1121A BLF7G27LS-75P (SOT1121B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF7G27L-75P BLF7G27LS-75P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P ...

Page 3

... P L(AV  D ACPR 885k 7.1 Ruggedness in class-AB operation The BLF7G27L-75P and BLF7G27LS-75P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P Thermal characteristics Parameter thermal resistance from junction to case Characteristics C ...

Page 4

... PAR = 9 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz (dB) 17 η 650 mA 2300 MHz Fig 3. Single carrier IS-95 power gain and drain efficiency as function of load power; typical values BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P 001aam248 70 η D (%) 100 P (W) L Fig 2. 001aam250 60 η D (%) 40 ...

Page 5

... PAR 650 mA 2300 MHz Fig 7. Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P 001aam252 ACPR ACPR 885k (dBc) ACPR 1980k (W) L Fig 6. 001aam254 (W) L Fig 8. ...

Page 6

... ACPR (dBc) −30 −40 −50 −60 − 650 mA 2300 MHz Fig 11. Single carrier W-CDMA ACPR at 5 MHz and at 10 MHz as function of load power; typical values BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P 001aam256 50 18.0 η (%) (dB) 40 17.6 30 17.2 20 16.8 10 16.4 0 16.0 30 ...

Page 7

... PAR 650 mA 2300 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P 001aam260 8 PAR ( Fig 14. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values All information provided in this document is subject to legal disclaimers. ...

Page 8

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121A Fig 15. Package outline SOT1121A BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P scale ...

Page 9

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. dimension is measured 0.030 inch (0.76 mm) from the body. Outline version IEC SOT1121B Fig 16. Package outline SOT1121B BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P scale ...

Page 10

... Revision history Table 9. Revision history Document ID BLF7G27L-75P_BLF7G27LS-75P v.2 Modifications: BLF7G27L-75P_BLF7G27LS-75P v.1 BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel 3rd Generation Partnership Project Interim Standard 95 ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor ...

Page 11

... BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 12

... For sales office addresses, please send an email to: BLF7G27L-75P_BLF7G27LS-75P Product data sheet BLF7G27L-75P; BLF7G27LS-75P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 13

... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 14 July 2010 Document identifier: BLF7G27L-75P_BLF7G27LS-75P ...

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