BLF7G27LS-75P,112 NXP Semiconductors, BLF7G27LS-75P,112 Datasheet - Page 5

• Manufacturer Part Number: BLF7G27LS-75P,112
• Description: TRANSISTOR PWR LDMOS SOT1121B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27LS-75P,112

• Package / Case: SOT-1121B
• Transistor Type: LDMOS
• Frequency: 2.3GHz ~ 2.4GHz
• Gain: 17dB
• Voltage - Rated: 65V
• Current Rating: 18A
• Current - Test: 650mA
• Voltage - Test: 28V
• Power - Output: 12W
• Resistance Drain-source Rds (on): 0.29 Ohms
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Continuous Drain Current: 18 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
BLF7G27L-75P_BLF7G27LS-75P
Product data sheet
Fig 5.
Fig 7.
ACPR
(dBc)
PAR
−30
−50
−70
−90
10
8
6
4
2
0
V
Single carrier IS-95 ACPR at 885 kHz and at
1980 kHz as function of load power;
typical values
0
V
Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
10
10
Dq
Dq
= 650 mA; f = 2300 MHz.
= 650 mA; f = 2300 MHz.
20
20
30
30
ACPR
ACPR
40
40
All information provided in this document is subject to legal disclaimers.
001aam252
001aam254
1980k
885k
P
P
L
L
BLF7G27L-75P; BLF7G27LS-75P
(W)
(W)
50
50
Rev. 2 — 14 July 2010
Fig 6.
Fig 8.
ACPR
(dBc)
PAR
−30
−50
−70
−90
10
8
6
4
2
0
0
V
Single carrier IS-95 ACPR at 885 kHz and at
1980 kHz as function of load power;
typical values
V
Single carrier IS-95 peak-to-average power
ratio as a function of load power;
typical values
DS
DS
= 28 V; I
= 28 V; I
10
10
Dq
Dq
= 650 mA; f = 2400 MHz.
= 650 mA; f = 2400 MHz.
20
20
Power LDMOS transistor
30
30
ACPR
ACPR
© NXP B.V. 2010. All rights reserved.
40
40
001aam253
001aam255
1980k
885k
P
P
L
L
(W)
(W)
50
50
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