BLF7G27LS-100,112 NXP Semiconductors, BLF7G27LS-100,112 Datasheet - Page 10

• Manufacturer Part Number: BLF7G27LS-100,112
• Description: TRANSISTOR PWR LDMOS SOT502B
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27LS-100,112

• Package / Case: SOT502B
• Transistor Type: LDMOS
• Frequency: 2.6GHz ~ 2.7GHz
• Gain: 17.5dB
• Voltage - Rated: 65V
• Current - Test: 900mA
• Voltage - Test: 28V
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Power - Output: -
• Noise Figure: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

NXP Semiconductors
Fig 16. Package outline SOT502B
BLF7G27L-100_7G27LS-100
Preliminary data sheet
Earless flanged LDMOST ceramic package; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT502B
0.186
0.135
4.72
3.43
A
12.83
12.57
0.505
0.495
b
H
0.006
0.003
0.15
0.08
c
U 2
L
A
IEC
20.02
19.61
0.788
0.772
D
19.96
19.66
0.786
0.774
D 1
0.374
0.366
9.50
9.30
All information provided in this document is subject to legal disclaimers.
JEDEC
E
U 1
D 1
D
b
BLF7G27L-100; BLF7G27LS-100
0.375
0.364
9.53
9.25
REFERENCES
E 1
Rev. 2 — 5 April 2011
3
1
2
0.045
0.035
1.14
0.89
0
F
19.94
18.92
0.785
0.745
JEITA
scale
H
w 2
5
D
M
0.210
0.170
F
5.33
4.32
D
10 mm
L
M
0.067
0.057
1.70
1.45
Q
20.70
20.45
0.815
0.805
U 1
0.390
0.380
9.91
9.65
U 2
E 1
PROJECTION
0.010
EUROPEAN
0.25
w 2
c
Q
Power LDMOS transistor
E
© NXP B.V. 2011. All rights reserved.
ISSUE DATE
03-01-10
07-05-09
SOT502B
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