MRF8P20100HSR3 Freescale Semiconductor, MRF8P20100HSR3 Datasheet - Page 11

• Manufacturer Part Number: MRF8P20100HSR3
• Description: FET RF N-CH 2025MHZ 28V NI780H-4
• Manufacturer: Freescale Semiconductor

Specifications of MRF8P20100HSR3

• Transistor Type: N-Channel
• Frequency: 2.03GHz
• Gain: 16dB
• Voltage - Rated: 65V
• Current - Test: 400mA
• Voltage - Test: 28V
• Power - Output: 20W
• Package / Case: NI-780HS-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
Figure 15. Output Peak- -to- -Average Ratio Compression (PARC)
16.6
16.2
15.8
15.4
14.6
14.2
13.8
13.4
Figure 16. Single- -Carrier W- -CDMA Power Gain, Drain
17
15
13
17
16
15
14
13
12
11
18
15
12
9
6
3
0
1880
1800
1
Broadband Performance @ P
1880 MHz
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR =
9.9 dB @ 0.01% Probability
on CCDF
G
TYPICAL CHARACTERISTICS — 1880 MHz
V
Single--Carrier W--CDMA
DD
ps
DD
Figure 17. Broadband Frequency Response
Efficiency and ACPR versus Output Power
= 28 Vdc, P
1900
1835
= 28 Vdc, I
1900 MHz
1920
1870
3.84 MHz Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
P
out
DQA
out
Gain
, OUTPUT POWER (WATTS) AVG.
IRL
= 20 W (Avg.), I
= 400 mA, V
ACPR
1940
f, FREQUENCY (MHz)
1920 MHz
f, FREQUENCY (MHz)
1905
V
P
I
V
DQA
DD
in
GSB
1960
1940
= 0 dBm
10
= 28 Vdc
GSB
1920 MHz
= 400 mA
= 1.3 Vdc
DQA
PARC
1900 MHz
G
= 1.3 Vdc
ps
= 400 mA, V
1980
1975
out
1880 MHz
= 20 Watts Avg.
2000
2010
GSB
η
D
= 1.3 Vdc
2020
2045
ACPR
η
IRL
D
2040
2080
100
MRF8P20100HR3 MRF8P20100HSR3
0
--3
--6
--9
--12
--15
--18
46
44
42
40
38
--28
--30
--32
--34
--36
60
50
40
30
20
10
--38
0
0
--10
--20
--30
--40
--50
--60
--5
--10
--15
--20
--25
--30
--2
--2.1
--2.2
--2.3
--2.4
--2.5
11