MRF6V3090NR5 Freescale Semiconductor, MRF6V3090NR5 Datasheet - Page 2

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MRF6V3090NR5

Manufacturer Part Number
MRF6V3090NR5
Description
FET RF N-CH 860MHZ 50V TO270-4
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of MRF6V3090NR5

Transistor Type
N-Channel
Frequency
860MHz
Gain
22dB
Voltage - Rated
110V
Current - Test
350mA
Voltage - Test
50V
Power - Output
18W
Package / Case
TO-270AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Rating
-
Noise Figure
-

Available stocks

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Part Number
Manufacturer
Quantity
Price
Part Number:
MRF6V3090NR5
Manufacturer:
FREESCALE
Quantity:
1 400
2
MRF6V3090NR1 MRF6V3090NR5 MRF6V3090NBR1 MRF6V3090NBR5
Table 4. Moisture Sensitivity Level
Table 5. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Single Channel. ACPR measured in 7.61 MHz Channel Bandwidth @ ±4 MHz Offset @ 4 kHz Bandwidth.
1. Part internally input matched.
Per JESD22--A113, IPC/JEDEC J--STD--020
Gate--Source Leakage Current
Drain--Source Breakdown Voltage
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain--Source On--Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
(V
(I
(V
(V
(V
(V
(V
(V
(V
(V
D
GS
DS
DS
DS
DD
GS
DS
DS
DS
= 50 mA, V
= 5 Vdc, V
= 50 Vdc, V
= 100 Vdc, V
= 10 Vdc, I
= 50 Vdc, I
= 10 Vdc, I
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 50 Vdc, V
GS
DS
D
D
D
(1)
GS
GS
= 0 Vdc)
= 200 μAdc)
= 350 mAdc, Measured in Functional Test)
= 0.5 Adc)
GS
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
= 0 Vdc)
Test Methodology
Characteristic
(T
A
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 50 Vdc, I
DQ
V
Symbol
V
Rating
V
V
ACPR
(BR)DSS
I
I
I
C
DS(on)
C
GS(th)
GS(Q)
C
G
= 350 mA, P
IRL
GSS
DSS
DSS
η
3
oss
rss
iss
ps
D
out
21.0
27.5
Min
115
Package Peak Temperature
0.9
2
= 18 W Avg., f = 860 MHz, DVB--T OFDM
--62.0
65.4
22.0
28.5
260
Typ
591
--14
1.6
2.7
0.2
41
Freescale Semiconductor
--60.0
Max
24.0
0.5
2.4
3.5
10
20
--9
RF Device Data
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dB
dB
°C
pF
pF
pF
%

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