MRF8S26120HR3 Freescale Semiconductor, MRF8S26120HR3 Datasheet - Page 5

• Manufacturer Part Number: MRF8S26120HR3
• Description: FET RF N-CH 2.6GHZ 28V NI780
• Manufacturer: Freescale Semiconductor

Specifications of MRF8S26120HR3

• Transistor Type: N-Channel
• Frequency: 2.7GHz
• Gain: 15.6dB
• Voltage - Rated: 65V
• Current - Test: 900mA
• Voltage - Test: 28V
• Power - Output: 28W
• Package / Case: NI-780
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Rating: -
• Noise Figure: -

RF Device Data
Freescale Semiconductor
16.5
15.5
14.5
13.5
16
15
14
Figure 2. Output Peak- -to- -Average Ratio Compression (PARC)
15.9
15.8
15.7
15.6
15.5
15.4
15.3
15.2
15.1
--10
--20
--30
--40
--50
--60
--1
--2
--3
--4
--5
16
15
1
0
2570
10
1
Broadband Performance @ P
Figure 3. Intermodulation Distortion Products
ACPR
V
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2655 MHz
G
η
Compression (PARC) versus Output Power
DD
ps
D
--1 dB = 25 W
Figure 4. Output Peak- -to- -Average Ratio
2590
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
= 28 Vdc, P
DD
TYPICAL CHARACTERISTICS
V
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
= 28 Vdc, I
DD
IM7--U
20
IM7--L
= 28 Vdc, P
2610
versus Two- -Tone Spacing
P
out
out
TWO--TONE SPACING (MHz)
--2 dB = 35 W
DQ
= 80 W (PEP), I
, OUTPUT POWER (WATTS)
2630
f, FREQUENCY (MHz)
= 900 mA, f = 2655 MHz
out
--3 dB = 45 W
30
IM5--L
= 28 W (Avg.), I
IM5--U
2650
10
IM3--U
IM3--L
DQ
40
= 900 mA
2670
out
DQ
PARC
IRL
= 28 Watts Avg.
ACPR
= 900 mA
2690
50
2710
η
PARC
D
G
ps
2730
MRF8S26120HR3 MRF8S26120HSR3
60
100
32
31.8
31.6
31.4
31.2
60
50
40
30
20
10
0
--35
--36
--37
--38
--39
--40
--25
--30
--35
--40
--45
--50
--55
--13
--14
--15
--16
--17
--18
--1
--1.1
--1.2
--1.3
--1.4
--1.5
5