MCP4461T-104E/ST Microchip Technology, MCP4461T-104E/ST Datasheet - Page 43

• Manufacturer Part Number: MCP4461T-104E/ST
• Description: IC DGTL POT 257TAPS 100K 20TSSOP
• Manufacturer: Microchip Technology

Specifications of MCP4461T-104E/ST

• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Temperature Coefficient: 150 ppm/°C Typical
• Taps: 257
• Resistance (ohms): 100K
• Number Of Circuits: 4
• Memory Type: Non-Volatile
• Interface: I²C, 2-Wire Serial
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Number Of Pots: Quad
• Taps Per Pot: 257
• Resistance: 100 KOhms
• Wiper Memory: Non Volatile
• Buffered Wiper: Buffered
• Digital Interface: I2C
• Operating Supply Voltage: 2.7 V to 5.5 V
• Supply Current: 600 uA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Description/function: Quad I2C Digital POT with Nonvolatile Memory
• Mounting Style: SMD/SMT
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2.7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4.2.1
This memory can be grouped into two uses of
nonvolatile memory. These are:
•
•
The nonvolatile wipers start functioning below the
devices V
4.2.1.1
These locations allow the user to store up to 5 (9-bit)
locations worth of information.
4.2.1.2
These locations contain the wiper values that are
loaded into the corresponding volatile wiper register
whenever the device has a POR/BOR event. There are
four registers, one for each resistor network.
The nonvolatile wiper register enables stand-alone
operation of the device (without Microcontroller control)
after being programmed to the desired value.
4.2.1.3
The Nonvolatile Wiper values will be initialized to
mid-scale value. This is shown in
The General purpose EEPROM memory will be
programmed to a default value of 0x000.
It is good practice in the manufacturing flow to
configure the device to your desired settings.
TABLE 4-2:
© 2010 Microchip Technology Inc.
-502
-103
-503
-104
General Purpose Registers
Nonvolatile Wiper Registers
100.0 kΩ Mid scale
10.0 kΩ
50.0 kΩ
5.0 kΩ
POR
NONVOLATILE MEMORY
(EEPROM)
General Purpose Registers
Nonvolatile Wiper Registers
Factory Initialization of Nonvolatile
Memory (EEPROM)
/V
BOR
DEFAULT FACTORY
SETTINGS SELECTION
Mid scale
Mid scale
Mid scale
trip point.
8-bit 7-bit
80h
80h
80h
80h
Wiper
Table
Code
40h
40h
40h
40h
4-2.
Disabled
Disabled
Disabled
Disabled
4.2.1.4
There are 5 nonvolatile bits that are not directly
mapped into the address space. These bits control the
following functions:
• EEPROM Write Protect
• WiperLock Technology for Nonvolatile Wiper 0
• WiperLock Technology for Nonvolatile Wiper 1
• WiperLock Technology for Nonvolatile Wiper 2
• WiperLock Technology for Nonvolatile Wiper 3
The operation of WiperLock Technology is discussed in
Section 5.3. The state of the WL0, WL1, WL2, WL3,
and WP bits is reflected in the STATUS register (see
Register
EEPROM Write Protect
All internal EEPROM memory can be Write Protected.
When EEPROM memory is Write Protected, Write
commands to the internal EEPROM are prevented.
Write Protect (WP) can be enabled/disabled by two
methods. These are:
• External WP Hardware pin (MCP44X1 devices
• Nonvolatile configuration bit (WP)
High Voltage commands are required to enable and
disable the nonvolatile WP bit. These commands are
shown in
WiperLock Technology (High
To write to EEPROM, both the external WP pin and the
internal WP EEPROM bit must be disabled. Write
Protect does not block commands to the volatile
registers.
4.2.2
There are seven Volatile Memory locations. These are:
• Volatile Wiper 0
• Volatile Wiper 1
• Volatile Wiper 2
• Volatile Wiper 3
• Status Register
• Terminal Control (TCON0) Register 0
• Terminal Control (TCON)1 Register 1
The volatile memory starts functioning at the RAM
retention voltage (V
only)
4-1).
Section 7.8 “Modify Write Protect or
VOLATILE MEMORY (RAM)
Special Features
MCP444X/446X
RAM
).
Voltage)”.
DS22265A-page 43