MC9RS08KA4CWGR Freescale Semiconductor, MC9RS08KA4CWGR Datasheet - Page 24
MC9RS08KA4CWGR
Manufacturer Part Number
MC9RS08KA4CWGR
Description
IC MCU 8BIT 4KB FLASH 16SOIC
Manufacturer
Freescale Semiconductor
Series
RS08r
Datasheet
1.MC9RS08KA4CWGR.pdf
(42 pages)
Specifications of MC9RS08KA4CWGR
Core Processor
RS08
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
14
Program Memory Size
4KB (4K x 8)
Program Memory Type
FLASH
Ram Size
126 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
16-SOIC (0.300", 7.50mm Width)
Processor Series
RS08KA
Core
RS08
Data Bus Width
8 bit
Interface Type
Ethernet, USB, RS-232
Number Of Programmable I/os
14
Number Of Timers
2
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
DEMO9RS08KA8, DEMO9RS08KA2
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Electrical Characteristics
24
1
2
3
Program/Erase voltage
V
Program
Mass erase
Supply voltage for read operation
0 < f
Byte program time
Mass erase time
Cumulative program HV time
Total cumulative HV time
(total of t
HVEN to program setup time
PGM/MASS to HVEN setup time
HVEN hold time for PGM
HVEN hold time for MASS
V
HVEN to V
V
Recovery time
Program/erase endurance
T
Data retention
L
PP
PP
PP
Typicals are measured at 25 °C.
t
programmed more than twice before next erase.
Fast V
and cause permanent damage to the pad. External filtering for the V
filter is shown in
hv
to T
current
Bus
to PGM/MASS setup time
rise time
is the cumulative high voltage programming time to the same row before next erase. Same address can not be
H
< 10 MHz
PP
= –40°C to 85°C
me
PP
rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad
& t
3
hold time
hv
applied to device)
Figure
Characteristic
22.
2
Table 16. Flash Characteristics (continued)
MC9RS08KA8 Series MCU Data Sheet, Rev. 4
12 V
Figure 22. Example V
100 Ω
I
I
VPP_erase
Symbol
VPP_prog
t
V
hv_total
t
t
t
V
D_ret
t
t
t
t
nvh1
t
prog
t
t
t
Read
t
pgs
nvh
vph
—
nvs
vps
me
vrs
rcv
hv
PP
PP
PP
Filtering
1 nF
power source is recommended. An example V
1000
11.8
Min
500
100
200
1.8
V
20
10
20
20
15
—
—
—
—
5
5
1
PP
Typical
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Freescale Semiconductor
Max
12.2
200
100
5.5
40
—
—
—
—
—
—
—
—
—
—
—
8
2
cycles
hours
years
Unit
ms
ms
μA
μA
μs
μs
μs
μs
μs
ns
ns
ns
μs
V
V
PP