MC9S08JE128VMB Freescale Semiconductor, MC9S08JE128VMB Datasheet - Page 15

• Manufacturer Part Number: MC9S08JE128VMB
• Description: IC MCU 8BIT 128K FLASH 81MAPBGA
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08JE128VMB

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 48MHz
• Connectivity: I²C, SCI, SPI, USB
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 47
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 12K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C
• Package / Case: 81-LBGA
• Processor Series: S08JE
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 12 KB
• Maximum Clock Frequency: 48 MHz
• Operating Supply Voltage: - 0.3 V to + 3.8 V
• Maximum Operating Temperature: + 105 C
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: TWR-SER, TWR-ELEV, TWR-MCF51JE-KIT, TWR-S08JE128-KIT, TWR-LCD
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Solving
where K is a constant pertaining to the particular part. K can be determined from
for a known T
for any value of T
2.4
Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling
precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade Integrated Circuits.
(http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete dc parametric and functional testing is performed per the applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
Freescale Semiconductor
#
1
2
3
4
Equation 1
Human Body
Machine
Latch-up
ESD Protection Characteristics
Human Body Model (HBM)
Machine Model (MM)
Charge Device Model (CDM)
Latch-up Current at T
A
Model
. Using this value of K, the values of P
A
.
and
Equation 2
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Table 8. ESD and Latch-Up Protection Characteristics
A
Rating
= 125°C
for K gives:
Table 7. ESD and Latch-up Test Conditions
K = P
Preliminary — Subject to Change
D
Description
× (T
A
D
+ 273°C) + θ
and T
J
can be obtained by solving
Symbol
JA
V
V
V
I
HBM
CDM
LAT
MM
× (P
D
)
2
Equation 3
±2000
±200
±500
±100
Min
Symbol
Preliminary Electrical Characteristics
R1
R1
—
—
—
—
C
C
Equation 1
by measuring P
Max
—
—
—
—
Value
1500
–2.5
100
200
and
7.5
3
0
3
Equation 2
D
Unit
mA
V
V
V
(at equilibrium)
Unit
pF
pF
—
—
Ω
Ω
V
V
iteratively
C
T
T
T
T
Eqn. 3
15