BPX 43-3/4 OSRAM Opto Semiconductors Inc, BPX 43-3/4 Datasheet - Page 40

• Manufacturer Part Number: BPX 43-3/4
• Description: Photodetector Transistors PHOTODIODE
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPX 43-3/4

• Maximum Power Dissipation: 220 mW
• Maximum Dark Current: 20 nA
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Package / Case: TO-18
• Voltage - Collector Emitter Breakdown (max): 50V
• Current - Collector (ic) (max): 50mA
• Current - Dark (id) (max): 300nA
• Wavelength: 880nm
• Viewing Angle: 30°
• Power - Max: 220mW
• Mounting Type: Through Hole
• Orientation: Top View
• Phototransistor Type: Phototransistor
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector Current (dc) (max): 50mA
• Collector-emitter Sat Volt (max): 0.22/0.24V
• Dark Current (max): 100nA
• Light Current: 6000/9500uA
• Rise Time: 12000/15000ns
• Fall Time: 12000/15000ns
• Power Dissipation: 220mW
• Peak Wavelength: 880nm
• Half-intensity Angle: 30deg
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-18
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P3581

For more detailed product information and technical datasheets, please visit
Infrared Components Technical Data Infrared Emitters
146
Power TOPLED
w. Lens
T1 3/4 SMR
T1 3/4 SMR
T 1 3/4 SMR
REFLED
Power Emitters (> 40 mW)
SMT Emitters
Package
Package
Infrared Components
Infrared Emitters
Type
SFH 4248
SFH 4249
SFH 4258
SFH 4258S
SFH 4259
SFH 4259S
SFH 4542
SFH 4543
SFH 4551
Type
SFH 4450
http://catalog.osram-os.com
λ
typ
[nm]
950
860
860
950
950
860
λ
typ
[nm]
860
peak
peak
Half
angle
ϕ
[°]
± 17
Half angle
ϕ
[°]
± 15
± 25
± 15
± 25
± 10
± 10
± 10
Φ
typ
[mW]
30
e
Φ
typ
[mW]
50
50
80
50
80
50
50
50
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
e
I
[mW/sr]
40
e
I
[mW/sr]
100 (≥ 40)
55 (≥ 25)
90 (≥ 40)
100 (≥ 40)
55 (≥ 25)
60 (≥ 25)
200 (≥ 63)
200 (≥ 63)
180 (≥ 63)
e
Measure-
ment
cond.
I
mA,
t
F
p
=70
=20 ms
Measure-
ment cond.
I
t
I
t
I
t
I
t
I
t
I
t
I
t
I
t
F
F
F
F
F
F
F
F
p
p
p
p
p
p
p
p
V
[V]
1.6 (≤ 2)
=100 mA,
=100 mA,
=70 mA,
=100 mA,
=70 mA,
=100 mA,
=100 mA,
=100 mA,
=20 ms
=20 ms
=20 ms
=20 ms
=20 ms
=20 ms
=20 ms
=20 ms
F
Measure-
ment
cond.
I
mA, t
20 ms
F
= 70
V
[V]
1.5 (≤ 1.8)
1.5 (≤ 1.8)
3 (≤ 3.5)
1.5 (≤ 1.8)
3 (≤ 3.5)
1.5 (≤ 1.8)
1.5 (≤ 1.8)
1.5 (≤ 1.8)
F
p
=
Irra-
diance
E
[mW/
cm
8 (≥ 4)
e
2
Measure-
ment cond.
I
mA, t
ms
I
mA, t
ms
I
t
I
mA, t
ms
I
t
I
mA, t
ms
I
mA, t
ms
I
mA, t
ms
]
F
F
F
F
F
F
F
F
p
p
= 100
= 100
= 70 mA,
= 100
= 70 mA,
= 100
= 100
= 100
= 20 ms
= 20 ms
p
p
p
p
p
p
Measure-
ment
cond.
I
mA, t
20 ms
= 20
= 20
= 20
= 20
= 20
= 20
F
= 70
p
=
t
typ
[ns]
11
12
20
12
20
11
11
12
r
, t
f
t
typ
[ns]
12
r
, t
f
Ordering Code
Q65110A7518
Q65110A7519
Q65110A2975
Q65111A1158
Q65110A2464
Q65111A1159
Q65110A8093
Q65110A8094
Q65111A0506
Ordering Code
Q65110A9958
Technical Data
Package
Fig.
65
64
65
64
68
69
68
Package
Fig.
102