BPX 43-3/4 OSRAM Opto Semiconductors Inc, BPX 43-3/4 Datasheet - Page 9

Photodetector Transistors PHOTODIODE

BPX 43-3/4

Manufacturer Part Number
BPX 43-3/4
Description
Photodetector Transistors PHOTODIODE
Manufacturer
OSRAM Opto Semiconductors Inc
Type
Chipr
Datasheets

Specifications of BPX 43-3/4

Maximum Power Dissipation
220 mW
Maximum Dark Current
20 nA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Package / Case
TO-18
Voltage - Collector Emitter Breakdown (max)
50V
Current - Collector (ic) (max)
50mA
Current - Dark (id) (max)
300nA
Wavelength
880nm
Viewing Angle
30°
Power - Max
220mW
Mounting Type
Through Hole
Orientation
Top View
Phototransistor Type
Phototransistor
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
50V
Collector Current (dc) (max)
50mA
Collector-emitter Sat Volt (max)
0.22/0.24V
Dark Current (max)
100nA
Light Current
6000/9500uA
Rise Time
12000/15000ns
Fall Time
12000/15000ns
Power Dissipation
220mW
Peak Wavelength
880nm
Half-intensity Angle
30deg
Operating Temp Range
-40C to 125C
Operating Temperature Classification
Automotive
Mounting
Through Hole
Pin Count
3
Package Type
TO-18
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q62702P3581
Dual photodiodes
TO39
SFH 221
For more detailed product information and technical datasheets, please visit http://catalog.osram-os.com
Infrared Components
Silicon Photodetectors
DIL
BPX 48
SMT DIL
KOM 2125
Summary of Types
Page
115
132

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