BPW 34 OSRAM Opto Semiconductors Inc, BPW 34 Datasheet - Page 3

• Manufacturer Part Number: BPW 34
• Description: Photodiodes PHOTODIODE T/H
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPW 34

• Photodiode Material: Silicon
• Peak Wavelength: 850 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 80 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 20 ns
• Maximum Fall Time: 20 ns
• Package / Case: DIL-2
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Reverse
• Reverse Breakdown Voltage: 32V
• Forward Voltage: 1.3V
• Responsivity: 0.62A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 80uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: DIL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0073

Kennwerte (
Characteristics (
Bezeichnung
Parameter
Kurzschlussstrom,
Short-circuit current
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
Durchlassspannung,
Forward voltage
Kapazität,
Capacitance
Temperaturkoeffizient von
Temperature coefficient of
Temperaturkoeffizient von
Temperature coefficient of
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
Nachweisgrenze,
Detection limit
2007-05-23
L
R
= 50 Ω;
= 10 V, λ = 850 nm
V
V
R
T
R
= 0 V,
A
= 5 V; λ = 850 nm;
= 25 ° C, Normlicht A,
T
V
A
E
R
v
f
= 25 ° C, standard light A,
I
= 10 V, λ = 850 nm
= 1000 Ix
= 1 MHz,
F
= 100 mA,
V
I
V
I
SC
SC
O
O
E
= 0
I
E
p
= 800 µA
= 0
T
= 2856 K)
T
= 2856 K) (cont’d)
Symbol
Symbol
I
t
V
C
TC
TC
NEP
D*
3
r
SC
,
F
0
t
V
I
f
BPW 34, BPW 34 S, BPW 34 SR
6.6 × 10
Wert
Value
80
20
1.3
72
– 2.6
0.18
4.1 × 10
– 14
12
Einheit
Unit
µA
ns
V
pF
mV/K
%/K
cm
-------------------------- -
----------- -
W
Hz
×
W
Hz