BPW 34 OSRAM Opto Semiconductors Inc, BPW 34 Datasheet - Page 4

• Manufacturer Part Number: BPW 34
• Description: Photodiodes PHOTODIODE T/H
• Manufacturer: OSRAM Opto Semiconductors Inc
• Type: Chipr

Specifications of BPW 34

• Photodiode Material: Silicon
• Peak Wavelength: 850 nm
• Half Intensity Angle Degrees: 60 deg
• Maximum Reverse Voltage: 32 V
• Maximum Power Dissipation: 150 mW
• Maximum Light Current: 80 uA
• Maximum Dark Current: 30 nA
• Maximum Rise Time: 20 ns
• Maximum Fall Time: 20 ns
• Package / Case: DIL-2
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 40 C
• Photodiode Type: PIN
• Polarity: Reverse
• Reverse Breakdown Voltage: 32V
• Forward Voltage: 1.3V
• Responsivity: 0.62A/W
• Dark Current (max): 30nA
• Power Dissipation: 150mW
• Light Current: 80uA
• Rise Time: 20ns
• Fall Time: 20ns
• Operating Temp Range: -40C to 100C
• Operating Temperature Classification: Industrial
• Mounting: Through Hole
• Pin Count: 2
• Package Type: DIL
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q62702P0073

Relative Spectral Sensitivity
S
Dark Current
I
Directional Characteristics
S
2007-05-23
R
rel
rel
S
=
Ι
R
rel
=
=
4000
3000
2000
1000
100
f
50
60
70
80
90
pA
100
f
80
60
40
20
0
f
(
%
0
V
400
(ϕ)
0
(λ)
R
),
1.0
500 600 700 800 900 nm 1100
40
E
5
= 0
0.8
10
30
0.6
15
20
OHF00080
V
0.4
OHF00078
λ
V
R
20
10
ϕ
1.0
0.8
0.6
0.4
0.2
0
0
0
Photocurrent
Open-Circuit Voltage
Capacitance
C
20
Ι
=
P
C
10
f
10
10
10
10
µ
100
pF
(
80
70
60
50
40
30
20
10
A
-1
10
3
2
1
0
0
40
V
10
0
R
-2
),
f
60
10
= 1 MHz,
10
1
-1
I
P
80
=
10
4
10
V
Ι
f
2
O
P
0
(
100
E
E
v
OHF01402
V
),
10
= 0
10
O
3
V
120
1
=
OHF01066
E
R
lx
V
OHF00081
V
f
V
R
= 5 V
BPW 34, BPW 34 S, BPW 34 SR
10
(
E
10
10
10
10
10
10
mV
4
v
2
)
4
3
2
1
0
V
O
Total Power Dissipation
P
Dark Current
I
R
tot
=
P
Ι
tot
R
=
f
10
10
10
10
10
mW
160
140
120
100
nA
80
60
40
20
f
(
-1
0
3
2
1
0
T
(
0
0
T
A
),
A
)
V
20
20
R
= 10 V,
40
40
60
60
E
= 0
80 ˚C 100
80 ˚C 100
OHF00958
OHF00082
T
T
A
A