IGCM10F60GA Infineon Technologies, IGCM10F60GA Datasheet - Page 4

• Manufacturer Part Number: IGCM10F60GA
• Description: IGBT Modules MINI DUAL-IN-LINE 10A/600V W/NTC 24PIN
• Manufacturer: Infineon Technologies

Specifications of IGCM10F60GA

• Configuration: Dual Modules
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 10 A
• Power Dissipation: 1.2 KW
• Mounting Style: Through Hole
• Package / Case: PG-MDIP-24-1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

CIPOS™ IGCM10F60GA
CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
3Φ-bridge 600V / 10A
Features
Fully isolated Dual In-Line molded module
 Infineon
 Rugged SOI gate driver technology with
 Allowable negative VS potential up to -11V for
 Integrated bootstrap functionality
 Over current shutdown
 Temperature monitor
 Under-voltage lockout at all channels
 Low side emitter pins accessible for all phase
 Cross-conduction prevention
 All of 6 switches turn off during protection
 Minimum deadtime built in driver IC
 Lead-free terminal plating; RoHS compliant
Target Applications
 Dish washers
 Refrigerators
 Washing machines
 Air-conditioners
 Fans
 Low power motor drives
Data Sheet
monolithic body diode
stability against transient and negative voltage
signal transmission at VBS=15V
current monitoring (open emitter)
reverse
conducting
IGBTs
with
4/14
Description
integrating various power and control components
to increase reliability, optimize PCB size and
system costs.
It is designed to control three phase AC motors
and permanent magnet motors in variable speed
drives for applications like air conditioning,
refrigerator and washing machine. The package
concept is specially adapted to power applications,
which
electrical isolation, but also EMI-save control and
overload protection. The features of Infineon
reverse conducting IGBT are combined with an
optimized SOI gate driver for excellent electrical
performance.
System Configuration
 3 half bridges with reverse conducting IGBT
 3Φ SOI gate driver
 Thermistor
 Pin-to-heasink creepage distance typ. 1.6mm
The CIPOS™ module family offers the chance for
need
good
thermal
conduction
Aug. 2010
and