IPD090N03L G Infineon Technologies, IPD090N03L G Datasheet
IPD090N03L G
Specifications of IPD090N03L G
Related parts for IPD090N03L G
IPD090N03L G Summary of contents
Page 1
... IPS090N03L G PG-TO252-3-23 PG-TO251-3-11 090N03L 090N03L Symbol Conditions =25 ° = =100 ° =4 =25 ° =4 =100 ° =25 °C D,pulse =25 ° =25 Ω = = = /dt di /dt =200 A/µs, T =175 °C j,max V GS page 1 IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L mΩ IPU090N03L G PG-TO251-3 090N03L Value Unit 280 kV/µs ±20 V 2008-04-15 ...
Page 2
... I =250 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 =30 A DS( |>2 DS(on)max = page 2 IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G Value Unit 42 W -55 ... 175 °C 55/175/56 Values Unit min. typ. max 3.6 K 2.2 - 0.1 1 µ 100 - 10 100 nA - 10.8 13.5 mΩ - 7.5 9 Ω ...
Page 3
... MHz C rss t d( =1.6 Ω d(off g( plateau g(sync 4 = oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G Values Unit min. typ. max. - 1200 1600 pF - 500 660 - 7.4 9 6.4 8 280 - 0.91 1 2008-04-15 ...
Page 4
... Rev. 1.06 2 Drain current I =f 100 150 200 0 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0. [V] DS page 4 IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse [s] p 200 1 ...
Page 5
... V 7 Typ. transfer characteristics I =f |>2 DS(on)max parameter 100 175 ° Rev. 1.06 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f 100 ° [V] GS page 5 IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L =25 ° [A] D =25 ° [ 100 100 2008-04-15 ...
Page 6
... GS(th) 2.5 2 1.5 typ 1 0 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter Ciss 2 10 Coss Crss [V] DS page 6 IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L =250 µ - 100 140 T [° 175 °C, 98% 175 ° °C, 98% 0.5 1 1.5 V [V] SD 180 25 °C 2 2008-04-15 ...
Page 7
... T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.06 14 Typ. gate charge V =f(Q GS gate parameter °C 100 ° [µs] 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L =30 A pulsed [nC] gate ate 2008-04-15 ...
Page 8
... Package Outline Rev. 1.06 IPD090N03L G IPS090N03L G PG-TO252-3 page 8 IPF090N03L G IPU090N03L G 2008-04-15 ...
Page 9
... Package Outline Rev. 1.06 IPD090N03L G IPS090N03L G PG-TO252-3-23 page 9 IPF090N03L G IPU090N03L G 2008-04-15 ...
Page 10
... Package Outline Rev. 1.06 IPD090N03L G IPS090N03L G PG-TO251-3-11 page 10 IPF090N03L G IPU090N03L G 2008-04-15 ...
Page 11
... Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.06 IPD090N03L G IPS090N03L G PG-TO251-3 page 11 IPF090N03L G IPU090N03L G 2008-04-15 ...
Page 12
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.06 IPD090N03L G IPS090N03L G page 12 IPF090N03L G IPU090N03L G ...