SIA921EDJ-T1-GE3 Vishay, SIA921EDJ-T1-GE3 Datasheet

MOSFET Small Signal 20V 4.5A 7.8W 59mohm @ 4.5V

SIA921EDJ-T1-GE3

Manufacturer Part Number
SIA921EDJ-T1-GE3
Description
MOSFET Small Signal 20V 4.5A 7.8W 59mohm @ 4.5V
Manufacturer
Vishay
Datasheet

Specifications of SIA921EDJ-T1-GE3

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.059 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SC-70
Module Configuration
Dual
Continuous Drain Current Id
-4.5A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
59mohm
Rds(on) Test Voltage Vgs
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Part Number:
SIA921EDJ-T1-GE3
0
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 110 °C/W.
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09
Ordering Information: SiA921EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
- 20
(V)
PowerPAK SC-70-6 Dual
2.05 mm
6
D
0.059 at V
0.098 at V
1
5
G
R
2
D
DS(on)
1
4
S
S
GS
GS
1
2
1
J
(Ω)
= - 4.5 V
= - 2.5 V
D
= 150 °C)
G
2
b, f
Dual P-Channel 20-V (D-S) MOSFET
1
2
2.05 mm
D
2
3
I
- 4.5
- 4.5
D
Part # code
(A)
a
a
d, e
A
= 25 °C, unless otherwise noted
Q
Marking Code
Steady State
4.9 nC
g
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
(Typ.)
t ≤ 5 s
D F X
X X X
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Thermally Enhanced PowerPAK
• Typical ESD Protection: 1700 V
• High Speed Switching
• Compliant to RoHS Directive 2002/95/EC
• Load Switch, PA Switch and Battery Switch for Portable
• DC/DC Converters
Symbol
Symbol
T
R
R
J
V
V
Definition
Package
- Small Footprint Area
- Low On-Resistance
Devices
I
P
, T
I
DM
I
thJA
thJC
DS
GS
D
S
D
stg
G
1
®
Power MOSFET
Typical
P-Channel MOSFET
12.5
52
- 55 to 150
- 4.5
- 3.7
- 1.6
1.9
1.2
- 4.5
- 4.5
- 4.5
Limit
± 12
- 20
- 15
260
7.8
S
D
5
a, b, c
1
b, c
b, c
1
b, c
b, c
a
a
a
Maximum
G
2
65
16
Vishay Siliconix
SiA921EDJ
®
P-Channel MOSFET
SC-70
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
S
D
2
2
1

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SIA921EDJ-T1-GE3 Summary of contents

Page 1

... 2. Ordering Information: SiA921EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ...

Page 2

... SiA921EDJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...

Page 3

... V = 2 0.05 0. Drain Current (A) D On-Resistance vs. Drain Current and Gate Voltage Document Number: 64734 S09-2310-Rev. B, 02-Nov- °C (mA) GSS 2 1 2.0 2.5 3.0 1000 = 4 SiA921EDJ Vishay Siliconix - 150 ° GSS - °C GSS - - Gate-to-Source Voltage (V) GS Gate Current vs. Gate-to-Source Voltage ° 125 ° ...

Page 4

... SiA921EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 Total Gate Charge (nC) g Gate Charge 100 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1.0 0.9 0.8 0.7 0.6 0.5 0 Temperature (°C) J Threshold Voltage www.vishay.com 0.20 0.15 ...

Page 5

... BVDSS Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiA921EDJ Vishay Siliconix 100 µ 100 100 is specified 100 125 T - Case Temperature (°C) ...

Page 6

... SiA921EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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