SIA921EDJ-T1-GE3 Vishay, SIA921EDJ-T1-GE3 Datasheet - Page 6

• Manufacturer Part Number: SIA921EDJ-T1-GE3
• Description: MOSFET Small Signal 20V 4.5A 7.8W 59mohm @ 4.5V
• Manufacturer: Vishay

Specifications of SIA921EDJ-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.059 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70
• Module Configuration: Dual
• Continuous Drain Current Id: -4.5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 59mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SiA921EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64734.
www.vishay.com
6
0.01
0.01
0.1
1
1
10
10
0.02
-4
-4
0.05
Duty Cycle = 0.5
0.2
0.1
0.1
Single Pulse
Duty Cycle = 0.5
0.2
Single Pulse
0.02
0.05
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
10
-2
10
-3
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10
-1
1
10
-2
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
t
A
1
= P
S09-2310-Rev. B, 02-Nov-09
t
2
DM
Document Number: 64734
100
Z
th JA
th JA
t
t
1
2
(t)
= 85 °C/W
1000
10
-1