SIA921EDJ-T1-GE3 Vishay, SIA921EDJ-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIA921EDJ-T1-GE3
• Description: MOSFET Small Signal 20V 4.5A 7.8W 59mohm @ 4.5V
• Manufacturer: Vishay

Specifications of SIA921EDJ-T1-GE3

• Transistor Polarity: P-Channel
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.059 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.5 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PowerPAK SC-70
• Module Configuration: Dual
• Continuous Drain Current Id: -4.5A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 59mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64734
S09-2310-Rev. B, 02-Nov-09
0.20
0.15
0.10
0.05
0.00
0.5
0.4
0.3
0.2
0.1
0.0
15
12
9
6
3
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
Gate Current vs. Gate-to-Source Voltage
0.5
3
3
V
V
DS
GS
Output Characteristics
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
V
1.0
GS
I
6
D
- Drain Current (A)
= 2.5 V
6
V
GS
1.5
9
V
= 10 V thru 3 V
GS
I
GSS
9
= 4.5 V
2.0
12
at 25 °C (mA)
V
V
V
GS
GS
GS
12
2.5
15
= 1.5 V
= 2.5 V
= 2 V
3.0
15
18
10
1000
10
10
10
10
10
10
10
10
800
600
400
200
-10
-2
-3
-4
-5
-6
-7
-8
-9
5
4
3
2
1
0
0
0.0
0
0
C
Gate Current vs. Gate-to-Source Voltage
rss
3
4
V
V
V
0.5
GS
Transfer Characteristics
DS
GS
C
oss
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
iss
6
T
C
Capacitance
= 125 °C
8
T
I
C
GSS
1.0
= 25 °C
9
Vishay Siliconix
at 150 °C
12
SiA921EDJ
1 2
I
GSS
1.5
T
www.vishay.com
at 25 °C
C
16
= - 55 °C
1 5
2.0
20
1 8
3