SIA921EDJ-T1-GE3 Vishay, SIA921EDJ-T1-GE3 Datasheet - Page 2

MOSFET Small Signal 20V 4.5A 7.8W 59mohm @ 4.5V

SIA921EDJ-T1-GE3

Manufacturer Part Number
SIA921EDJ-T1-GE3
Description
MOSFET Small Signal 20V 4.5A 7.8W 59mohm @ 4.5V
Manufacturer
Vishay
Datasheet

Specifications of SIA921EDJ-T1-GE3

Transistor Polarity
P-Channel
Minimum Operating Temperature
- 55 C
Configuration
Dual
Resistance Drain-source Rds (on)
0.059 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
11 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
4.5 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK SC-70
Module Configuration
Dual
Continuous Drain Current Id
-4.5A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
59mohm
Rds(on) Test Voltage Vgs
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SIA921EDJ-T1-GE3
0
SiA921EDJ
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
V
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
DS
GS(th)
Temperature Coefficient
Temperature Coefficient
b
a
a
J
= 25 °C, unless otherwise noted
a
ΔV
Symbol
ΔV
R
V
GS(th)
I
t
t
t
t
I
I
DS(on)
V
GS(th)
D(on)
Q
V
Q
d(on)
d(off)
d(on)
d(off)
GSS
DSS
I
DS
Q
Q
g
R
SM
I
t
t
t
t
t
t
t
DS
SD
S
rr
a
b
fs
gs
gd
r
f
r
f
g
rr
g
/T
/T
J
J
I
V
F
V
I
I
DS
D
= - 3.7 A, dI/dt = 100 A/µs, T
DS
D
V
DS
≅ - 3.7 A, V
≅ - 3.7 A, V
= - 10 V, V
= - 10 V, V
= - 20 V, V
V
V
V
V
V
V
V
V
V
V
V
DS
GS
GS
I
DS
DS
DS
GS
DS
DD
DD
S
DS
= - 3.7 A, V
Test Conditions
≤ - 5 V, V
= V
= - 4.5 V, I
= - 2.5 V, I
= 0 V, V
= - 10 V, I
= 0 V, V
= - 10 V, R
= - 10 V, R
= 0 V, I
= - 20 V, V
I
D
T
f = 1 MHz
GS
GEN
GS
GEN
C
= - 250 µA
GS
GS
= 25 °C
, I
= - 4.5 V, I
= - 10 V, I
D
D
GS
= - 4.5 V, R
GS
= - 10 V, R
= 0 V, T
GS
= - 250 µA
= - 250 µA
D
D
D
GS
L
L
= ± 4.5 V
GS
= ± 12 V
= - 3.6 A
= - 4.5 V
= - 3.6 A
= - 1.5 A
= 2.7 Ω
= 2.7 Ω
= 0 V
= 0 V
J
D
D
= 55 °C
= - 4.7 A
J
= - 4.7 A
g
g
= 25 °C
= 1 Ω
= 1 Ω
Min.
- 0.5
- 20
- 15
0.048
0.080
Typ.
- 0.9
- 14
S09-2310-Rev. B, 02-Nov-09
2.5
7.1
1.3
2.1
6.3
8.5
6.5
11
15
20
20
25
10
12
25
10
15
5
6
Document Number: 64734
0.059
0.098
Max.
- 1.4
± 10
- 4.5
- 1.2
- 10
- 15
± 1
- 1
23
11
30
30
40
15
10
20
40
15
30
12
mV/°C
Unit
µA
nC
nC
ns
ns
ns
Ω
Ω
V
V
A
S
A
V

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