BSZ16DN25NS3G Infineon Technologies, BSZ16DN25NS3G Datasheet - Page 2

• Manufacturer Part Number: BSZ16DN25NS3G
• Description: MOSFET N-CH 250V 10.9A 8TDSON
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSZ16DN25NS3G

• Input Capacitance (ciss) @ Vds: 920pF @ 100V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 165 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 10.9A
• Vgs(th) (max) @ Id: 4V @ 32µA
• Gate Charge (qg) @ Vgs: 11.4nC @ 10V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Package / Case: 8-PowerTDFN
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 146 mOhms
• Forward Transconductance Gfs (max / Min): 14 S, 7 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 10.9 A
• Power Dissipation: 62.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSZ16DN25NS3GTR

Rev. 2.1
3)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
6 cm
V
V
V
T
V
T
V
V
|V
I
D
j
j
GS
DS
DS
DS
GS
GS
=5.5 A
=25 °C
=125 °C
DS
page 2
=V
=200 V, V
=200 V, V
=0 V, I
=20 V, V
=10 V, I
|>2|I
2
cooling area
GS
D
, I
|R
D
2
D
=1 mA
D
=32 µA
(one layer, 70 µm thick) copper area for drain
DS(on)max
DS
=5.5 A
GS
GS
=0 V
=0 V,
=0 V,
3)
,
min.
250
2
7
-
-
-
-
-
-
-
Values
typ.
146
0.1
2.1
10
14
3
1
BSZ16DN25NS3 G
-
-
-
max.
100
100
165
60
2
4
1
-
-
-
2010-09-01
Unit
K/W
V
µA
nA
m
S