BLF7G27L-150P,112 NXP Semiconductors, BLF7G27L-150P,112 Datasheet - Page 2

• Manufacturer Part Number: BLF7G27L-150P,112
• Description: TRANS LDMOS SOT539A
• Manufacturer: NXP Semiconductors

Specifications of BLF7G27L-150P,112

• Voltage - Rated: 65V
• Transistor Type: LDMOS (Dual)
• Frequency: 2.5GHz ~ 2.7GHz
• Gain: 16.5dB
• Current Rating: 37A
• Current - Test: 1.2A
• Voltage - Test: 28V
• Power - Output: 30W
• Package / Case: *
• Channel Type: N
• Channel Mode: Enhancement
• Continuous Drain Current: 37A
• Drain Source Voltage (max): 65V
• Output Power (max): 30W(Typ)
• Power Gain (typ)@vds: 16.5@28VdB
• Frequency (min): 2.5GHz
• Frequency (max): 2.7GHz
• Package Type: LDMOST
• Pin Count: 5
• Forward Transconductance (typ): 0.86S
• Drain Source Resistance (max): 140(Typ)@6.05Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 26%
• Mounting: Screw
• Mode Of Operation: 1-Carrier W-CDMA/IS-95
• Number Of Elements: 2
• Vswr (max): 20
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Noise Figure: -
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLF7G27L-150P_7G27LS-150P
Product data sheet
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLF7G27L-150P (SOT539A)
1
2
3
4
5
BLF7G27LS-150P (SOT539B)
1
2
3
4
5
Type number
BLF7G27L-150P
BLF7G27LS-150P
Symbol
V
V
I
T
T
D
stg
j
DS
GS
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
drain1
drain2
gate1
gate2
source
drain1
drain2
gate1
gate2
source
Description
BLF7G27L-150P; BLF7G27LS-150P
All information provided in this document is subject to legal disclaimers.
Package
Name Description
-
-
Rev. 1 — 12 November 2010
flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads
earless flanged balanced LDMOST ceramic package;
4 leads
Conditions
[1]
[1]
Simplified outline
1
3
1
3
2
4
2
4
Power LDMOS transistor
5
5
Graphic symbol
-
Min
-
−0.5
-
−65
© NXP B.V. 2010. All rights reserved.
3
4
3
4
Max
65
+13
37
+150
225
Version
SOT539A
SOT539B
1
2
1
2
sym117
sym117
2 of 14
5
5
Unit
V
V
A
°C
°C