FET RF LDMOS DUAL 230MHZ NI1230

 

MRFE6VP5600HR5

Manufacturer Part NumberMRFE6VP5600HR5
DescriptionFET RF LDMOS DUAL 230MHZ NI1230
ManufacturerFreescale Semiconductor
MRFE6VP5600HR5 datasheets

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Specifications of MRFE6VP5600HR5

Voltage - Rated130VTransistor TypeLDMOS (Dual)
Frequency230MHzGain25dB
Current - Test100mAVoltage - Test50V
Power - Output600WPackage / CaseNI-1230
Lead Free Status / RoHS StatusLead free / RoHS CompliantCurrent Rating-
Noise Figure-Other namesMRFE6VP5600HR5TR
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Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
• Typical Performance: V
= 50 Volts, I
DD
P
out
Signal Type
(W)
Pulsed (100 μsec,
600 Peak
20% Duty Cycle)
CW
600 Avg.
• Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc,
230 MHz, at all Phase Angles, Designed for Enhanced Ruggedness
• 600 Watts Pulsed Peak Power, 20% Duty Cycle, 100 μsec
Features
• Unmatched Input and Output Allowing Wide Frequency Range Utilization
• Device can be used Single--Ended or in a Push--Pull Configuration
• Qualified Up to a Maximum of 50 V
• Characterized from 30 V to 50 V for Extended Power Range
• Suitable for Linear Application with Appropriate Biasing
• Integrated ESD Protection with Greater Negative Gate--Source Voltage
Range for Improved Class C Operation
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel options, see p. 12.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Total Device Dissipation @ T
= 25°C
C
Derate above 25°C
(1,2)
Operating Junction Temperature
Table 2. Thermal Characteristics
Thermal Resistance, Junction to Case
Case Temperature 68°C, 600 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle, 100 mA, 230 MHz
Case Temperature 60°C, 600 W CW, 100 mA, 230 MHz
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor
= 100 mA
DQ
f
G
IRL
η
ps
D
(MHz)
(dB)
(%)
(dB)
230
25.0
74.6
--18
230
24.6
75.2
--17
Operation
DD
Symbol
Value
Unit
V
--0.5, +130
Vdc
DSS
V
--6.0, +10
Vdc
GS
T
-- 65 to +150
°C
stg
T
150
°C
C
P
1667
W
D
8.33
W/°C
T
225
°C
J
Characteristic
Document Number: MRFE6VP5600H
Rev. 1, 1/2011
MRFE6VP5600HR6
MRFE6VP5600HSR6
1.8- -600 MHz, 600 W CW, 50 V
LATERAL N- -CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 375D- -05, STYLE 1
NI- -1230
MRFE6VP5600HR6
CASE 375E- -04, STYLE 1
NI- -1230S
MRFE6VP5600HSR6
PARTS ARE PUSH- -PULL
RF
/V
3
1
RF
/V
in
GS
out
DS
2 RF
/V
4
RF
/V
out
DS
in
GS
(Top View)
Figure 1. Pin Connections
(2,3)
Symbol
Value
Unit
°C/W
Z
0.022
θJC
R
0.12
θJC
MRFE6VP5600HR6 MRFE6VP5600HSR6
1

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MRFE6VP5600HR5 Summary of contents

  • Page 1

    ... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2010--2011. All rights reserved. RF Device Data Freescale Semiconductor = 100 mA ...

  • Page 2

    ... Vdc 2.0 2.5 3.0 Vdc — 0.26 — Vdc — 1.60 — pF — 129 — pF — 342 — 600 W Peak (120 W Avg.), f = 230 MHz, out 23.5 25.0 26.5 dB 73.5 74.6 — % — --18 -- Device Data Freescale Semiconductor ...

  • Page 3

    ... Z3, Z4 0.170″ x 0.100″ Microstrip Z5, Z6 0.116″ x 0.285″ Microstrip Z7, Z8 0.116″ x 0.285″ Microstrip Z9, Z10 0.108″ x 0.285″ Microstrip Figure 1. MRFE6VP5600HR6(HSR6) Test Circuit Schematic - - Pulsed RF Device Data Freescale Semiconductor + C10 C11 C12 C13 R1 Z11 Z7 Z9 Z13 ...

  • Page 4

    ... C22 COAX3 L3 C16 C17 C15 C20 C18 C19 C21 L4 COAX4 C26 C27 C28 C29 Part Number Manufacturer ATC ATC Johanson ATC Kemet AVX Kemet ATC ATC ATC ATC ATC ATC Multicomp Micro Coax Coilcraft Coilcraft Vishay Arlon RF Device Data Freescale Semiconductor ...

  • Page 5

    ... MHz Pulse Width = 100 μsec, 20% Duty Cycle 20 0 100 200 300 400 P , OUTPUT POWER (WATTS) PULSED out Figure 7. Pulsed Drain Efficiency versus Output Power RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS iss Pulse Width = 100 μsec, 20% Duty Cycle oss rss ...

  • Page 6

    ... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 9. MTTF versus Junction Temperature — CW MRFE6VP5600HR6 MRFE6VP5600HSR6 6 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 230 T , JUNCTION TEMPERATURE (° Vdc 600 W Avg., and η = 75.2%. DD out D 250 RF Device Data Freescale Semiconductor ...

  • Page 7

    ... Input Matching Network Figure 10. Series Equivalent Source and Load Impedance RF Device Data Freescale Semiconductor Z source f = 230 MHz f = 230 MHz Z load Vdc 100 mA 600 W Peak DD DQ out source MHz Ω 230 1.78 + j5.45 2.75 + j5. Test circuit impedance as measured from source gate to gate, balanced configuration. ...

  • Page 8

    ... MRFE6VP5600HR6 MRFE6VP5600HSR6 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

  • Page 9

    ... RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 9 ...

  • Page 10

    ... MRFE6VP5600HR6 MRFE6VP5600HSR6 10 RF Device Data Freescale Semiconductor ...

  • Page 11

    ... RF Device Data Freescale Semiconductor MRFE6VP5600HR6 MRFE6VP5600HSR6 11 ...

  • Page 12

    ... The R5 tape and reel option for MRFE6VP5600H and MRFE6VP5600HS parts will be available for 2 years after release of MRFE6VP5600H and MRFE6VP5600HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRFE6VP5600H and MRFE6VP5600HS in the R6 tape and reel option ...

  • Page 13

    ... Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer ...

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