W25Q64CVSSIG Winbond Electronics, W25Q64CVSSIG Datasheet - Page 64

• Manufacturer Part Number: W25Q64CVSSIG
• Description: IC SPI FLASH 64MBIT 8-SOIC
• Manufacturer: Winbond Electronics

Specifications of W25Q64CVSSIG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 64M (8M x 8)
• Speed: 80MHz
• Interface: SPI Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (0.083", 2.10mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q5822008

12.7 AC Electrical Characteristics (
Notes:
1.
2.
3.
4.
DESCRIPTION
/HOLD Active Hold Time relative to CLK
/HOLD Not Active Setup Time relative to CLK
/HOLD Not Active Hold Time relative to CLK
/HOLD to Output Low-Z
/HOLD to Output High-Z
Write Protect Setup Time Before /CS Low
Write Protect Hold Time After /CS High
/CS High to Power-down Mode
/CS High to Standby Mode without Electronic
Signature Read
/CS High to Standby Mode with Electronic Signature
Read
/CS High to next Instruction after Suspend
Write Status Register Time
Byte Program Time (First Byte)
Additional Byte Program Time (After First Byte)
Page Program Time
Sector Erase Time (4KB)
Block Erase Time (32KB)
Block Erase Time (64KB)
Chip Erase Time
Clock high + Clock low must be less than or equal to 1/f
Value guaranteed by design and/or characterization, not 100% tested in production.
Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
For multiple bytes after first byte within a page, t
bytes programmed.
(4)
BPN
cont’d)
= t
(4)
BP1 +
C
.
- 64 -
t
BP2 * N
SYMBOL
t
t
t
t
t
t
(typical) and t
WHSL
SHWL
HHQX
RES
RES
HLQZ
t
t
t
t
t
SUS
CHHH
HHCH
CHHL
DP
t
t
t
t
t
t
t
BE
BE
t
BP1
BP2
PP
SE
CE
W
(2)
1
2
(2)
1
2
(2)
(2)
(2)
(2)
(3)
(3)
BPN
ALT
t
t
HZ
LZ
= t
BP1 +
MIN
t
100
BP2 * N
20
5
5
5
(max), where N = number of
TYP
120
150
SPEC
2.5
0.7
10
30
30
15
W25Q64CV
1000
MAX
200
800
1.8
12
20
15
50
12
30
7
3
3
3
UNIT
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs
µs
s