NIS5112D1R2G ON Semiconductor, NIS5112D1R2G Datasheet

IC ELECTRONIC FUSE HOTSWAP 8SOIC

NIS5112D1R2G

Manufacturer Part Number
NIS5112D1R2G
Description
IC ELECTRONIC FUSE HOTSWAP 8SOIC
Manufacturer
ON Semiconductor
Type
Hot-Swap Switchr
Datasheet

Specifications of NIS5112D1R2G

Applications
Hard Drives
Internal Switch(s)
Yes
Current Limit
2.0A
Voltage - Supply
9 V ~ 18 V
Operating Temperature
-40°C ~ 175°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NIS5112D1R2G
NIS5112D1R2GOSTR

Available stocks

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NIS5112
Electronic Fuse
FET driven by an internal charge pump. This switch features a
SENSEFET® which allows for current sensing using inexpensive
chip resistors instead of expensive, low impedance current shunts.
thermal protection circuit.
Features
Typical Applications
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 9
The NIS5112 is an integrated switch utilizing a high side N−channel
It is designed to operate in 12 V systems and includes a robust
Integrated Power Device
Power Device Thermally Protected
No External Current Shunt Required
Enable/Timer Pin
Adjustable Slew Rate for Output Voltage
9 V to 18 V Input Range
30 mW Typical
Internal Charge Pump
ESD Ratings: Human Body Model (HBM); 4000 V
These are Pb−Free Devices
Hard Drives
Regulator
Voltage
Enable/Timer
Thermal
Enable/
Latch
Timer
3
V
Figure 1. Block Diagram
8
CC
Overvoltage
Charge
Clamp
Pump
GND
1
Current
Slew Rate
Limit
Voltage
dV/dt
2
1
Current Limit
4
Source
5, 6, 7
†For information on tape and reel specifications,
NIS5112D1R2G
NIS5112D2R2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
8
Device
x
A
Y
WW
G
(Note: Microdot may be in either location)
1
ORDERING INFORMATION
http://onsemi.com
= L for thermal latch off
= H for thermal auto−retry
= Assembly Location
= Year
= Work Week
= Pb−Free Package
SOIC−8 NB
CASE 751
Auto−Retry
(Pb−Free)
(Pb−Free)
Package
Latch Off
SOIC−8
SOIC−8
Publication Order Number:
8
1
Tape & Reel
Tape & Reel
MARKING
DIAGRAM
Shipping
AYWWG
2500 /
2500
NIS5112/D
112x
G

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NIS5112D1R2G Summary of contents

Page 1

... Semiconductor Components Industries, LLC, 2011 January, 2011 − Rev (Note: Microdot may be in either location) Device NIS5112D1R2G NIS5112D2R2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Current Current Limit Limit 4 Source ...

Page 2

Table 1. FUNCTIONAL PIN DESCRIPTION Pin Function 3 Enable/Timer A high level signal on this pin allows the device to begin operation. Connection of a capacitor will delay turn on for timing purposes. A low input signal inhibits the operation. ...

Page 3

Table 3. ELECTRICAL CHARACTERISTICS Characteristics POWER FET Delay Time (Enabling of Chip to Beginning of Conduction (10% of IPK)) Charging Time (Beginning of Conduction 1000 mF dV/dt load ON Resistance ...

Page 4

R (W) extILimit Figure 2. Current Limit Adjustment +12 V Enable signal is compatible with open collector devices as well as most families. Enable GND (Typical operating conditions: V 140 120 100 80 I ...

Page 5

Input Voltage Output Voltage Figure 5. Turn−on Waveforms for a Resistive Load Input Voltage Output Voltage Load Current ( dV/dt) Figure 6. Turn−on Waveforms for a Load Capacitance of 3,300 mf (C http://onsemi.com Slew ...

Page 6

Input Voltage Figure 7. Turn−on Waveforms for an Overvoltage Condition (10 W Resistive Load) Figure 8. Current Waveforms for Overload, Short Circuit and Thermal Shutdown http://onsemi.com V Regulated out Load Current 10 ms/div (2 V/div) (1 A/div) ...

Page 7

Basic Operation This device is a self−protected, resettable, electronic fuse. It contains circuits to monitor the input voltage, output current, die temperature, turn−on di/dt and turn−on dV/dt, as well as an enable/timer function. On application of the input voltage, the ...

Page 8

There is an inherent delay in the turn on of the electronic fuse, due to the method of gate drive used. The gate of the power FET is charged through a high impedance resistor, and from the time that the ...

Page 9

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SENSEFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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