NIS5112D1R2G ON Semiconductor, NIS5112D1R2G Datasheet - Page 8

• Manufacturer Part Number: NIS5112D1R2G
• Description: IC ELECTRONIC FUSE HOTSWAP 8SOIC
• Manufacturer: ON Semiconductor
• Type: Hot-Swap Switchr

Specifications of NIS5112D1R2G

• Applications: Hard Drives
• Internal Switch(s): Yes
• Current Limit: 2.0A
• Voltage - Supply: 9 V ~ 18 V
• Operating Temperature: -40°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NIS5112D1R2G; NIS5112D1R2GOSTR

fuse, due to the method of gate drive used. The gate of the
power FET is charged through a high impedance resistor,
and from the time that the gate starts charging until the time
that it reaches its threshold voltage, there will be no
conduction. Once the gate reaches its threshold voltage, the
output current will begin a controlled ramp up phase.
enable/timer circuit. Figure 10 shows a simplified diagram
of the enable/timer circuit.
There is an inherent delay in the turn on of the electronic
This delay will be added to any timing delay due to the
Figure 10. Simplified Schematic Diagram of the
Enable/
Timer
Enable/Timer Circuit
80 mA
2.5 V
+
−
Enabled
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8
Thermal Protection Circuit
Power FET and removes the gate drive if the maximum level
is exceeded. The NIS5112 device has two different thermal
limit versions, auto−retry and latch off.
Auto−Retry Version
threshold is reached (T
back on until the die temperature reduces down to 95°C
(40°C hysteresis, typical). It will keep auto−retrying until
the fault condition is removed or power is turned−off.
Latch−Off Version
the thermal limit threshold is reached (T
and will remain off until power is reset.
The temperature limit circuit senses the temperature of the
The device will shut down when the thermal limit
For the latch−off version, the device will shut down when
J
= 135°C, typical) and will not turn
J
= 135°C, typical)