NIS5112D1R2G ON Semiconductor, NIS5112D1R2G Datasheet - Page 4

• Manufacturer Part Number: NIS5112D1R2G
• Description: IC ELECTRONIC FUSE HOTSWAP 8SOIC
• Manufacturer: ON Semiconductor
• Type: Hot-Swap Switchr

Specifications of NIS5112D1R2G

• Applications: Hard Drives
• Internal Switch(s): Yes
• Current Limit: 2.0A
• Voltage - Supply: 9 V ~ 18 V
• Operating Temperature: -40°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NIS5112D1R2G; NIS5112D1R2GOSTR

100
10
1
0
10
Figure 2. Current Limit Adjustment
Enable signal is compatible
with open collector devices
as well as most families.
+12 V
R
GND
extILimit
(Typical operating conditions: V
100
(W)
Enable
Figure 4. Typical Application Circuit
I
I
LIMIT
LIMIT
_OL
_SS
Enable/
Timer
http://onsemi.com
1000
NIS5112
in
GND
Current Limit
= 12 V, R
4
Source
dV/dt
140
120
100
80
60
40
20
ILimit
0
1 mF
1
= 56 W, C
Figure 3. Overload vs. Shutdown Time
56 W
dV/dt
10
= 1 mF)
TIME (ms)
Load
100
1/2 in
double sided board
1000
2
, 1 oz copper,
T
A
= 25°C
10000