NIS5112D1R2G ON Semiconductor, NIS5112D1R2G Datasheet - Page 3

• Manufacturer Part Number: NIS5112D1R2G
• Description: IC ELECTRONIC FUSE HOTSWAP 8SOIC
• Manufacturer: ON Semiconductor
• Type: Hot-Swap Switchr

Specifications of NIS5112D1R2G

• Applications: Hard Drives
• Internal Switch(s): Yes
• Current Limit: 2.0A
• Voltage - Supply: 9 V ~ 18 V
• Operating Temperature: -40°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NIS5112D1R2G; NIS5112D1R2GOSTR

3. Verified by design.
Table 3. ELECTRICAL CHARACTERISTICS
POWER FET
THERMAL LATCH
ENABLE/TIMER
OVERVOLTAGE CLAMP
CURRENT LIMIT
dV/dt CIRCUIT
TOTAL DEVICE
Delay Time (Enabling of Chip to Beginning of Conduction (10% of IPK))
Charging Time (Beginning of Conduction to 90% of V
C
ON Resistance
(I
(I
(I
Off State Output Voltage
(V
(V
(V
Output Capacitance (V
Shutdown Temperature (Note 3)
Thermal Hysteresis (Auto Retry Only) (Note 3)
Enable Voltage (Turn−on)
(R
(R
(R
Enable Voltage (Turn−off)
(R
(R
(R
Charging Current (Current Sourced into Timing Cap)
(T
(T
(T
Output Clamping Voltage
(V
(V
(V
Short Circuit Current Limit,
(R
(R
(R
Overload Current Limit, (Note 3)
(R
(R
(R
Slew Rate
(C
Charging Current (Current Sourced into dV/dt Cap)
(T
(T
(T
Max Capacitor Voltage
Bias Current (Device Operational, Load Open, V
Minimum Operating Voltage
D
D
D
dV/dt
in
in
in
J
J
J
CC
CC
CC
J
J
J
load
load
load
load
load
load
extILimit
extILimit
extILimit
extILimit
extILimit
extILimit
dV/dt
= 2 A, T
= 2 A, T
= 2 A, T
= −20°C) (Note 3)
= 25°C)
= 100°C) (Note 3)
= −20°C) (Note 3)
= 25°C)
= 100°C) (Note 3)
= 12 V
= 12 V
= 12 V
= 18 V, T
= 18 V, T
= 18 V, T
= 1 mF, C
= 2 K, T
= 2 K, T
= 2 K, T
= 2 K, T
= 2 K, T
= 2 K, T
= 1 mf)
= 56 W, T
= 56 W, T
= 56 W, T
= 56 W, T
= 56 W, T
= 56 W, T
dc
dc
dc
J
J
J
= −20°C) (Note 3)
= 25°C)
= 100°C) (Note 3)
, Enable Low, V
, Enable Low, T
, Enable Low, T
J
J
J
J
J
J
J
J
J
load
= −20°C) (Note 3)
= 25°C)
= 100°C) (Note 3)
= −20°C) (Note 3)
= 25°C)
= 100°C) (Note 3)
= −20°C) (Note 3)
= 25°C)
= 100°C) (Note 3)
J
J
J
J
J
J
= 1000 mF
= −20°C) (Note 3)
= 25°C)
= 100°C) (Note 3)
= −20°C)
= 25°C)
= 100°C)
DS
= 12 V
J
J
dc
Characteristics
= 25°C)
= 100°C) (Note 3)
, T
dc
J
= −20°C) (Note 3)
, V
GS
= 0 V
dc
, f = 10 kHz)
in
= 12 V)
(Unless otherwise noted: V
out
)
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3
Symbol
CC
I
I
I
V
R
V
V
Lim−SS
Lim−OL
Charge
dV/dt
I
V
T
I
V
T
T
t
Clamp
dV/dt
V
DSon
ENon
ENoff
Bias
chg
hyst
max
SD
min
dly
= 12 V, R
off
LIMIT
0.130
2.45
2.05
Min
125
2.5
2.7
2.0
1.7
3.7
3.5
3.4
67
70
71
14
14
13
67
70
71
−
−
−
−
−
−
−
−
−
−
−
−
−
−
= 56 W T
J
23.5
15.5
14.5
0.15
1.45
Typ
396
135
= 25°C)
5.0
2.7
2.5
2.3
4.6
4.4
4.3
64
28
37
40
80
83
84
15
80
83
84
−
−
−
−
−
−
−
−
−
−
−
0.170
Max
27.5
43.5
16.2
V
120
120
200
145
1.8
1.9
2.0
3.2
3.0
2.7
5.5
5.3
5.2
2.0
9.0
32
90
92
96
17
16
90
92
96
−
−
−
−
−
−
−
CC
V/ms
Unit
mW
mV
mA
ms
ms
pF
mA
mA
°C
°C
V
V
V
A
A
V
V