AM29F800BB-55EF Spansion Inc., AM29F800BB-55EF Datasheet - Page 43

• Manufacturer Part Number: AM29F800BB-55EF
• Description: IC, FLASH, 8MBIT, 55NS, TSOP-48
• Manufacturer: Spansion Inc.

Specifications of AM29F800BB-55EF

• Memory Type: Flash
• Memory Size: 8Mbit
• Memory Configuration: 1M X 8 / 512K X 16
• Access Time: 55ns
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

REVISION SUMMARY
Revision A (August 1997)
Initial release.
Revision B (October 1997)
Global
Added -55 speed option. Changed data sheet designa-
tion from Advance Information to Preliminary.
Sector Protection/Unprotection
Corrected text to indicate that these functions can only
be implemented using programming equipment.
Table 1, Device Bus Operations
Revised to indicate inputs for both CE# and RESET#
are required for standby mode.
Program Command Sequence
Changed to indicate Data# Polling is active for 2 µs
after a program command sequence if the sector spec-
ified is protected.
Sector Erase Command Sequence and DQ3: Sector
Erase Timer
Corrected sector erase timeout to 50 µs.
Erase Suspend Command
Changed to indicate that the device suspends the
erase operation a maximum of 20 µs after the rising
edge of WE#.
DC Characteristics
Changed to indicate V
to 12.5 V, with a V
typical values to TTL table. Revised CMOS typical
standby current (I
Figure 14: Chip/Sector Erase Operation Timings;
Figure 19: Alternate CE# Controlled Write
Operation TImings
Corrected hexadecimal values in address and data
waveforms. In Figure 19, corrected data values for chip
and sector erase.
Erase and Programming Performance
Corrected word and chip programming times.
Revision C (January 1998)
Global
Formatted for consistency with other 5.0 volt-only
data sheets.
November 2, 2006 21504E5
CC3
CC
).
ID
test condition of 5.0 V. Added
min and max values are 11.5
D A T A S H E E T
Am29F800B
Revision C+1 (April 1998)
Distinctive Characteristics
Changed typical program/erase current to 30 mA to
match the CMOS DC Characteristics table.
Changed minimum endurance to 1 million write cycles
per sector guaranteed.
AC Characteristics
Erase/Program Operations: Corrected the notes refer-
ence for t
100% tested. Changed t
ns device. Changed t
to 12 µs.
Alternate CE# Controlled Erase/Program Operations:
Corrected the notes reference for t
These parameters are 100% tested. Changed t
t
word mode specification to 12 µs.
Temporary Sector Unprotect Table
Added note reference for t
100% tested.
Erase and Programming Performance
In Notes 1 and 6, changed the endurance specification
to 1 million cycles.
Revision C+2 (April 1998)
Product Selector Guide
Deleted the -55 speed option for V
Added the -55 speed option for V
Ordering Information
Va l i d C o m b i n a t i o n s fo r A m 2 9 F 8 0 0 B T- 5 5 a n d
Am29F800BB-55: Added the extended temperature
range for all package types.
Operating Ranges
V
. . . +4.75 V to +5.25 V”. Changed “V
devices . . . . +4.5 V to +5.5 V” to “V
. . . +4.5 V to +5.5 V”.
Erase and Programming Performance
Note 2: Deleted “(4.75 V for -55)”.
CP
CC
specifications for 55 ns device. Changed t
Supply Voltages: Deleted “V
WHWH1
and t
WHWH1
WHWH2
DS
and t
VIDR
word mode specification
. These parameters are
. This parameter is not
CP
CC
CC
WHWH1
specifications for 55
CC
CC
for ± 5% devices .
= 5.0 V ± 10%.
for all devices .
= 5.0 V ± 5%.
CC
and t
for ±10%
WHWH2
WHWH1
DS
and
41
.