H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 4

• Manufacturer Part Number: H27UF081G1M-TPCB
• Description: IC, MEMORY, FLASH NAND 1GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UF081G1M-TPCB

• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Package / Case: TSOP
• Memory Type: Flash - NAND
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes
• Memory Size: 1Gbit

1. SUMMARY DESCRIPTION
The HYNIX HY27US(08/16)1G1M series is a 128Mx8bit with spare 4Mx8 bit capacity. The device is offered in 3.3V Vcc
Power Supply.
Its NAND cell provides the most cost-effective solution for the solid state mass storage market.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old
data is erased.
The device contains 8192 blocks, composed by 32 pages consisting in two NAND structures of 16 series connected
Flash cells.
typical 2ms on a 16Kbyte(X8 device) block.
Data in the page mode can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and
data input/output as well as command input. This interface allows a reduced pin count and easy migration towards dif-
ferent densities, without any rearrangement of footprint.
Commands, Data and Addresses are synchronously introduced using CE, WE, ALE and CLE input pin.
The on-chip Program/Erase Controller automates all program and erase functions including pulse repetition, where
required, and internal verification and margining of data.
The modifying can be locked using the WP input pin.
The output pin R/B (open drain buffer) signals the status of the device during each operation. In a system with multi-
ple memories the R/B pins can be connected all together to provide a global status signal.
Even the write-intensive systems can take advantage of the HY27US(08/16)1G1M extended reliability of 100K pro-
gram/erase cycles by providing ECC (Error Correcting Code) with real time mapping-out algorithm.
Optionally the chip could be offered with the CE don’t care function. This option allows the direct download of the code
from the NAND Flash memory device by a microcontroller, since the CE transitions do not stop the read operation.
The copy back function allows the optimization of defective blocks management: when a page program operation fails
the data can be directly programmed in another page inside the same array section without the time consuming serial
data insertion phase.
The HYNIX HY27US(08/16)1G1M series is available in 48 - TSOP1 12x20 mm, 48 - USOP1 12 x 17 mm.
1.1 Product List
Rev 0.2 / May. 2007
A program operation allows to write the 512-byte page in typical 200us and an erase operation can be performed in
PART NUMBER
HY27US081G1M
HY27US161G1M
ORIZATION
x16
x8
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
2.7V - 3.6 Volt
VCC RANGE
HY27US(08/16)1G1M Series
48TSOP1 / 48USOP1
PACKAGE
Preliminary
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