H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 18

• Manufacturer Part Number: H27UF081G1M-TPCB
• Description: IC, MEMORY, FLASH NAND 1GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UF081G1M-TPCB

• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Package / Case: TSOP
• Memory Type: Flash - NAND
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes
• Memory Size: 1Gbit

Rev 0.2 / May. 2007
Input / Output Capacitance
Input Capacitance
Program Time
Number of partial Program Cycles in the same page
Block Erase Time
Item
Table 11: Program / Erase Characteristics
Table 10: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter
Symbol
C
C
I/O
IN
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Spare Array
Main Array
Test Condition
V
V
IN
IL
=0V
=0V
Symbol
HY27US(08/16)1G1M Series
t
t
NOP
NOP
PROG
BERS
Min
Min
-
-
-
-
-
-
Typ
200
2
-
-
Max
10
10
Preliminary
Max
500
4
4
3
Unit
Cycles
Cycles
pF
pF
Unit
ms
us
18