H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 18
![IC, MEMORY, FLASH NAND 1GB, TSOP48](/photos/19/5/190513/42334033_sml.jpg)
H27UF081G1M-TPCB
Manufacturer Part Number
H27UF081G1M-TPCB
Description
IC, MEMORY, FLASH NAND 1GB, TSOP48
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet
1.H27UF081G1M-TPCB.pdf
(39 pages)
Specifications of H27UF081G1M-TPCB
Access Time
45ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Base Number
27
Interface
Serial
Logic
RoHS Compliant
Package / Case
TSOP
Memory Type
Flash - NAND
Memory Configuration
128M X 8
Rohs Compliant
Yes
Memory Size
1Gbit
Rev 0.2 / May. 2007
Input / Output Capacitance
Input Capacitance
Program Time
Number of partial Program Cycles in the same page
Block Erase Time
Item
Table 11: Program / Erase Characteristics
Table 10: Pin Capacitance (TA=25C, F=1.0MHz)
Parameter
Symbol
C
C
I/O
IN
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Spare Array
Main Array
Test Condition
V
V
IN
IL
=0V
=0V
Symbol
HY27US(08/16)1G1M Series
t
t
NOP
NOP
PROG
BERS
Min
Min
-
-
-
-
-
-
Typ
200
2
-
-
Max
10
10
Preliminary
Max
500
4
4
3
Unit
Cycles
Cycles
pF
pF
Unit
ms
us
18