H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 23

• Manufacturer Part Number: H27UF081G1M-TPCB
• Description: IC, MEMORY, FLASH NAND 1GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UF081G1M-TPCB

• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Package / Case: TSOP
• Memory Type: Flash - NAND
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes
• Memory Size: 1Gbit

Rev 0.2 / May. 2007
I/O
CLE
CE
WE
RE
I/O
CLE
ALE
R/B
WE
CE
RE
x
x
00h or 01h Col. Add1
tWC
Address
Column
Figure 10: Read1 Operation (Read One Page)
Row Add1 Row Add2
Page(Row) Address
t
CLS
t
CS
Figure 9: Status Read Cycle
t
t
WP
DS
70h
Row Add3
t
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
t
t
CLH
CH
DH
tWB
tRP
Busy
tR
t
WHR
tAR
t
CLR
Dout N
t
IR
Dout N+1
HY27US(08/16)1G1M Series
t
CEA
tRC
t
REA
Dout N+2
Status Output
t
RHZ
t
CHZ
Preliminary
Dout 527
tRHZ
tRB
tCHZ
tCEH
tCRY
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