H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 38
![IC, MEMORY, FLASH NAND 1GB, TSOP48](/photos/19/5/190513/42334033_sml.jpg)
H27UF081G1M-TPCB
Manufacturer Part Number
H27UF081G1M-TPCB
Description
IC, MEMORY, FLASH NAND 1GB, TSOP48
Manufacturer
HYNIX SEMICONDUCTOR
Datasheet
1.H27UF081G1M-TPCB.pdf
(39 pages)
Specifications of H27UF081G1M-TPCB
Access Time
45ns
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
0°C To +70°C
Base Number
27
Interface
Serial
Logic
RoHS Compliant
Package / Case
TSOP
Memory Type
Flash - NAND
Memory Configuration
128M X 8
Rohs Compliant
Yes
Memory Size
1Gbit
Rev 0.2 / May. 2007
Symbol
alpha
C1
D1
A1
A2
CP
D
A
B
C
E
e
Table 18: 48pin-USOP1, 12 x 17mm, Package Mechanical Data
Figure 32. 48pin-USOP1, 12 x 17mm, Package Outline
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
16.900
11.910
15.300
0.470
0.130
0.065
0.450
Min
0
0
millimeters
HY27US(08/16)1G1M Series
17.000
12.000
15.400
0.050
0.520
0.160
0.100
0.650
0.500
Typ
17.100
12.120
15.500
Preliminary
0.650
0.080
0.570
0.230
0.175
0.750
0.100
Max
8
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