H27UF081G1M-TPCB HYNIX SEMICONDUCTOR, H27UF081G1M-TPCB Datasheet - Page 2

• Manufacturer Part Number: H27UF081G1M-TPCB
• Description: IC, MEMORY, FLASH NAND 1GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of H27UF081G1M-TPCB

• Access Time: 45ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Base Number: 27
• Interface: Serial
• Logic: RoHS Compliant
• Package / Case: TSOP
• Memory Type: Flash - NAND
• Memory Configuration: 128M X 8
• Rohs Compliant: Yes
• Memory Size: 1Gbit

Document Title
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
Revision History
Rev 0.2 / May. 2007
Revision
0.01
0.02
0.03
0.04
No.
0.1
0.2
Initial Draft.
1) Delete PRE pin.
2) Delete Lock mechanism.
3) Delete FBGA Package.
- Figure & dimension are changed.
1) Change DC characteristics (Table 8)
1) Add ECC algorithm. (1bit/512bytes)
2) Correct Read ID Cycle & Read ID naming
3) Correct Copy back program
4) Change DC and Operating Characteristics
1) Correct Read ID Cycle
2) Change NOP
3) Correct copy back function
1) Correct figure 32.
Before
After
Typ
15
10
I
CC1
Max
30
20
Typ
15
10
I
CC2
History
Max
30
20
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Typ
15
10
I
CC3
Max
30
20
HY27US(08/16)1G1M Series
Nov. 11. 2005
Dec. 01. 2005
Dec. 14. 2005
May. 18. 2007
Mar. 28. 2006
Oct. 02. 2006
Draft Date
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Remark
2