AM29F200BB-70SF Spansion Inc., AM29F200BB-70SF Datasheet - Page 37

• Manufacturer Part Number: AM29F200BB-70SF
• Description: IC, FLASH, 2MBIT, 70NS, SOIC-44
• Manufacturer: Spansion Inc.

Specifications of AM29F200BB-70SF

• Memory Type: Flash
• Memory Size: 2Mbit
• Memory Configuration: 256K X 8 / 128K X 16
• Access Time: 70ns
• Supply Voltage Range: 4.5V To 5.5V
• Memory Case Style: SOIC
• No. Of Pins: 44
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25×C, 5.0 V V
2. Under worst case conditions of 90°C, V
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four-bus-cycle command sequence for programming. See Table 1
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Note: Includes all pins except V
TSOP AND SO PIN CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
DATA RETENTION
November 1, 2006 21526D4
Sector Erase Time
Chip Erase Time
Byte Programming Time
Word Programming Time
Chip Programming Time (Note 3)
Input Voltage with respect to V
V
Parameter
Minimum Pattern Data Retention Time
CC
programming typicals assume checkerboard pattern.
program faster than the maximum byte program time listed.
for further information on command definitions.
Parameter
Current
Symbol
C
C
C
OUT
IN2
IN
Parameter
A
Input Capacitance
Output Capacitance
Control Pin Capacitance
= 25°C, f = 1.0 MHz.
Parameter Description
Parameter Description
SS
CC
on all I/O pins
. Test conditions: V
Typ (Note 1)
CC
= 4.5 V (V
1.8
12
1
5
7
D A T A
CC
Am29F200B
CC
Test Setup
= 5.0 V, one pin at a time.
V
V
V
OUT
= 4.75 V for ±5% devices), 1,000,000 cycles.
IN
IN
Limits
= 0
= 0
Max (Note 2)
S H E E T
= 0
300
500
5.4
8
Test Conditions
150°C
125°C
Typ
8.5
6
8
Unit
sec
sec
sec
µs
µs
CC
, 1,000,000 cycles. Additionally,
Excludes 00h programming prior to
erasure (Note 4)
Excludes system-level overhead
(Note 5)
–100 mA
–1.0 V
Min
Max
Min
7.5
12
10
10
20
Comments
V
CC
+100 mA
Max
Years
Years
+ 1.0 V
Unit
Unit
pF
pF
pF
35