CAT28F010GI-12 CATALYST SEMICONDUCTOR, CAT28F010GI-12 Datasheet - Page 9

IC, FLASH, 1MBIT, 120NS, LCC-32

CAT28F010GI-12

Manufacturer Part Number
CAT28F010GI-12
Description
IC, FLASH, 1MBIT, 120NS, LCC-32
Manufacturer
CATALYST SEMICONDUCTOR
Datasheet

Specifications of CAT28F010GI-12

Memory Type
Flash
Memory Size
1Mbit
Memory Configuration
128K X 8
Access Time
120ns
Supply Voltage Range
4.5V To 5.5V
Memory Case Style
PLCC
No. Of Pins
32
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Manufacturer
Quantity
Price
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Manufacturer:
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WRITE OPERATIONS
The following operations are initiated by observing the
sequence specified in the Write Command Table.
Read Mode
The device can be put into a standard READ mode by
initiating a write cycle with 00H on the data bus. The
subsequent read cycles will be performed similar to a
standard EPROM or E
Figure 4. A.C. Timing for Erase Operation
© 2009 SCILLC. All rights reserved.
Characteristics subject to change without notice
ADDRESSES
DATA (I/O)
WE (W)
OE (G)
CE (E)
V CC POWER-UP
V CC
V PP
& STANDBY
5.0V
0V
V PPH
V PPL
t GHWL
HIGH-Z
2
SETUP ERASE
PROM Read.
COMMAND
t VPEL
t DS
t WC
t CH
t WP
t CS
t WPH
DATA IN
= 20H
COMMAND
t DH
ERASE
t DS
t WC
DATA IN
= 20H
t WP
ERASING
t CH
t DH
9
t AS
t CS
t WHWH2
Signature Mode
An alternative method for reading device signature (see
Read Operations Signature Mode), is initiated by writing
the code 90H into the command register while keeping
V
OE low (and WE high) will output the device signature.
A Read cycle from address 0001H retrieves the binary
code for the device on outputs I/O
PP
ERASE VERIFY
COMMAND
t WP
high. A read cycle from address 0000H with CE and
t DS
t WC
CATALYST Code = 00110001 (31H)
28F010 Code = 1011 0100 (B4H)
t AH
DATA IN
= A0H
t DH
t CH
t WHGL
t OLZ
t OE
t LZ
t CE
VERIFICATION
ERASE
t RC
DATA OUT
0
VALID
to I/O
V CC POWER-DOWN/
Doc. No. MD-1019, Rev. G
CAT28F010
7
STANDBY
t EHQZ
t DF
.
t OH
28F010 F11

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