HY27UF084G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF084G2B-TPCB Datasheet - Page 22

• Manufacturer Part Number: HY27UF084G2B-TPCB
• Description: IC, MEMORY, FLASH NAND 4GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of HY27UF084G2B-TPCB

• Access Time: 20ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Interface: Parallel
• Logic: RoHS Compliant
• Memory Type: Flash - NAND
• Memory Configuration: 512M X 8
• Rohs Compliant: Yes

Rev 0.4 / Jan. 2008
DEVICE IDENTIFIER CYCLE
HY27UF084G2B
HY27UF164G2B
Part Number
IO
0
1
2
3
4
5
6
7
Page Program
2nd
3rd
4th
5th
1st
Ready / Busy
Ready / Busy
Write Protect
Pass / Fail
NA
NA
NA
NA
Voltage
3.3V
3.3V
Width
Block Erase
Ready / Busy
Ready / Busy
Write Protect
Bus
x16
x8
Table 14 : Status Register Coding
Pass / Fail
Table 15: Device Identifier Coding
NA
NA
NA
NA
Table 16: Read ID Data Table
(Manufacture Code)
1st cycle
Page Size, Block Size, Spare Size, Organization
ADh
ADh
Ready /
Ready /
Protect
Internal chip number, cell Type, etc.
Read
Write
Busy
Busy
NA
NA
NA
NA
NA
Multiplane information
Manufacturer Code
DESCRIPTION
Device Identifier
4Gbit (512Mx8bit) NAND Flash
(Device Code)
Cache Read
Controller Bit
2nd cycle
Ready/Busy
HY27UF(08/16)4G2B Series
DCh
CCh
P/E/R
NA
NA
NA
NA
NA
NA
cycle
3rd
10h
10h
Busy: ‘0’ Ready:’1’
Not Protected: ‘1’
Active: ‘0’ Idle:’1’
Pass: ‘0’ Fail: ‘1’
Protected: ‘0’
CODING
cycle
4th
D5h
95h
-
-
-
-
cycle
5th
54h
54h
22