HY27UF084G2B-TPCB HYNIX SEMICONDUCTOR, HY27UF084G2B-TPCB Datasheet - Page 8

• Manufacturer Part Number: HY27UF084G2B-TPCB
• Description: IC, MEMORY, FLASH NAND 4GB, TSOP48
• Manufacturer: HYNIX SEMICONDUCTOR

Specifications of HY27UF084G2B-TPCB

• Access Time: 20ns
• Supply Voltage Range: 2.7V To 3.6V
• Memory Case Style: TSOP
• No. Of Pins: 48
• Operating Temperature Range: 0°C To +70°C
• Package / Case: TSOP
• Base Number: 27
• Interface: Parallel
• Logic: RoHS Compliant
• Memory Type: Flash - NAND
• Memory Configuration: 512M X 8
• Rohs Compliant: Yes

Rev 0.4 / Jan. 2008
READ1
READ FOR COPY-BACK
READ ID
RESET
PAGE PROGRAM
COPY BACK PGM
MULTI PLANE PROGRAM
MULTI PLANE COPYBACK
PROGRAM
BLOCK ERASE
MULTI PLANE
BLOCK ERASE
READ STATUS REGISTER
RANDOM DATA INPUT
RANDOM DATA OUTPUT
READ CACHE (RANDOM)
READ CACHE (SEQUENTIAL)
READ CACHE END
READ EDC STATUS REGISTER
NOTE:
1. L must be set to Low.
2. In case of x16, I/O8 ~ I/O15 are don’t care
NOTE:
1. L must be set to Low.
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
1st Cycle
2nd Cycle
3rd Cycle
4th Cycle
5th Cycle
1st Cycle
FUNCTION
IO0
A11
A19
A27
A0
A8
IO0
A12
A20
A28
A0
A8
IO1
A12
A20
A28
A1
A9
1st CYCLE
Table 3: Address Cycle Map(x8)
00h
00h
90h
FFh
80h
85h
80h
85h
60h
60h
70h
85h
05h
00h
31h
3Fh
7Bh
Table 4: Address Cycle Map(x16)
IO1
A13
A21
A29
A1
A9
Table 5: Command Set
IO2
A10
A13
A21
L
A2
(1)
2nd CYCLE
IO2
A10
A14
A22
L
A2
D0h
E0h
(1)
30h
35h
10h
10h
11h
11h
60h
31h
IO3
A14
A22
L
L
-
-
-
-
-
-
-
A3
(1)
(1)
IO3
A11
A15
A23
L
A3
3rd CYCLE
(1)
IO4
A15
A23
L
L
A4
(1)
(1)
4Gbit (512Mx8bit) NAND Flash
D0h
81h
81h
-
-
-
-
-
-
-
-
-
-
-
-
-
-
HY27UF(08/16)4G2B Series
IO4
A16
A24
L
L
A4
(1)
(1)
IO5
A16
A24
L
L
A5
(1)
(1)
4th CYCLE
10h
10h
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IO5
A17
A25
L
L
A5
IO6
A17
A25
(1)
(1)
L
L
A6
(1)
(1)
Acceptable command
IO6
A18
A26
L
L
IO7
A6
A18
A26
L
L
during busy
A7
(1)
(1)
(1)
(1)
Yes
Yes
I/O8-
IO15
IO7
A19
A27
L
L
L
L
L
L
L
A7
(1)
(1)
(1)
(1)
(1)
(1)
(1)
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