FP25R12W2T4 Infineon Technologies, FP25R12W2T4 Datasheet - Page 8

• Manufacturer Part Number: FP25R12W2T4
• Description: IGBT Module
• Manufacturer: Infineon Technologies

Specifications of FP25R12W2T4

• Transistor Polarity: N Channel
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 175W
• No. Of Pins: 23
• Collector Emitter Saturation Voltage Vce(sat): 1.85V
• Channel Type: N
• Configuration: Array 7
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Automotive
• Rohs Compliant: Yes
• Packages: AG-EASY2B-1
• Ic (max): 25.0 A
• Vce(sat) (typ): 1.85 V
• Technology: IGBT4
• Housing: EasyPIM™ 2B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Technische Information / technical information
IGBT-Module
IGBT-modules
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
0,1
10
1
0,001
0
5
10 15 20 25 30 35 40 45 50
0,01
τ
0,1
FP25R12W2T4
1
10
8
3,0
2,7
2,4
2,1
1,8
1,5
1,2
0,9
0,6
0,3
0,0
50
45
40
35
30
25
20
15
10
5
0
0,2
0
20 40 60 80 100 120 140 160 180 200
0,4
0,6
0,8
Vorläufige Daten
preliminary data
1,0
1,2
1,4