2MBI100TA-060-50 FUJI ELECTRIC, 2MBI100TA-060-50 Datasheet

no-image

2MBI100TA-060-50

Manufacturer Part Number
2MBI100TA-060-50
Description
DUAL IGBT MODULE 100A 600V NPT
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 2MBI100TA-060-50

Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
100A
Collector Emitter Voltage Vces
2.4V
Power Dissipation Max
310W
Collector Emitter Voltage V(br)ceo
600V
Transistor
RoHS Compliant

Related parts for 2MBI100TA-060-50

2MBI100TA-060-50 Summary of contents

Page 1

...

Page 2

...

Page 3

... Outline Drawing ( Unit : Equivalent circuit 2MBI100TA-060 MS5F 5289 3 14 H04-004-03 ...

Page 4

Absolute Maximum Ratings ( at Tc= 25 ℃ unless otherwise specified ) Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature (*1) Isolation voltage Screw Torque (*1) All terminals should be connected together when ...

Page 5

... Indication on module Lot No. 7. Applicable category This specification is applied to IGBT Module named 2MBI100TA-060 8. Storage and transportation notes ・ The module should be stored at a standard temperature C and humidity 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ...

Page 6

Definition of the allowable avalance energy during short circuit cutfing of. IC -ICP VCE 11. UL recognition This products is recognized by Underwriters Laboratories Inc., the file No. is E82988. 12. Packing and Labeling Display * Each modules are ...

Page 7

Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...

Page 8

Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage ...

Page 9

Reliability Test Results Test cate- Test items gories 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressure Cooker 5 Temperature Cycle 6 ...

Page 10

Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 300 15V 12V VGE= 20V 200 100 Collector - Emitter voltage : VCE [ Inverter ] Collector current vs. Collector-Emitter voltage ...

Page 11

Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=33ohm, Tj= 25C 1000 ton toff tr 100 100 150 Collector current : Inverter ] Switching time vs. Gate resistance ...

Page 12

Inverter ] Forward current vs. Forward on voltage (typ.) 200 Tj=125C 100 Forward on voltage : Transient thermal resistance 2 1 0.1 0.01 0.001 0.01 0.1 Pulse width : Pw [ ...

Page 13

This product shall be used within its abusolute maximun rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格(電圧,電流,温度等)の範囲内で御使用下さい。 絶対最大定格を超えて使用すると、素子が破壊する場合があります。 - Conect adequate fuse or protector of circuit between three-phase line ...

Page 14

... Fuji Electric is constantly making every endeavor to improve the product quality and reliability.   However, semiconductor products may rarely happen to fail or malfunction. To prevent accidents causing injuly or death, damage to property like by fire, and other social damage resulted from a failure or malfunction of the Fuji Electric semiconductor products, take some measures to keep safety such as redundant design, spread-fire-preventive design, and malfunction-protective design. 富 ...

Related keywords