2MBI100TA-060-50 FUJI ELECTRIC, 2MBI100TA-060-50 Datasheet - Page 9

• Manufacturer Part Number: 2MBI100TA-060-50
• Description: DUAL IGBT MODULE 100A 600V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI100TA-060-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 310W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor: RoHS Compliant

gories
cate-
Test
1 Terminal Strength
2 Mounting Strength
3 Vibration
4 Shock
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
4 Unsaturated
5 Temperature Cycle
6 Thermal Shock
1 High temperature Reverse Bias
2 High temperature Bias
3 Temperature Humidity Bias
4 Intermitted Operating Life
(Pull test)
( for gate )
(Power cycling)
( for IGBT )
Pressure Cooker
Storage
Test items
Reliability Test Results
EIAJ ED-4701
Reference
Method 1
Method 2
B - 112
B - 121
B - 111
B - 123
B - 131
B - 141
D - 313
D - 323
B - 121
D - 322
A - 111
A - 112
A - 121
A - 122
norms
MS5F 5289
Number
sample
of test
5
5
5
5
5
5
5
5
5
5
5
5
5
5
of failure
Number
sample
0
0
0
0
0
0
0
0
0
0
0
0
0
0
H04-004-03
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