GA035XCP12-247 GeneSiC Semiconductor, GA035XCP12-247 Datasheet

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IGBT/SiC Diode Co-pack Features • Optimal Punch Through (OPT) technology • SiC freewheeling diode • Positive temperature coefficient for easy paralleling • Extremely fast switching speeds • Temperature independent switching behavior of SiC rectifier • Best RBSOA/SCSOA capability in the ...

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Electrical Characteristics Parameter IGBT Gate Threshold Voltage Collector-Emitter Leakage Current Gate-Leakage Current Collector-Emitter Threshold Voltage Collector-Emitter Slope Resistance Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Reverse Bias Safe Operating Area Short Circuit Current Short Circuit ...

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Figure 3: Typical Transfer Characteristics Figure 5: Typical FWD Forward Characteristics Figure 7: Typical Turn On Energy Losses and Switching Times January 2011 Figure 4: Typical Blocking Characteristics Figure 6: Typical Turn On Gate Charge Figure 8: Typical Turn Off ...

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Figure 9: Typical Reverse Recovery Currents and Times Package Dimensions: TO-247AB NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS January 2011 PACKAGE OUTLINE Preliminary Datasheet http://www.genesicsemi.com ...

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... Trade Center Place Suite 155 Dulles, VA 20166 GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice. GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any intellectual property rights is granted by this document ...