IRF840APBF Vishay, IRF840APBF Datasheet - Page 8

• Manufacturer Part Number: IRF840APBF
• Description: N CHANNEL MOSFET, 500V, 8A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840APBF

Document Number: 91065
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
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
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Notes:
I
Repetitive rating; pulse width limited by
T
R
SD
max. junction temperature. ( See fig. 11 )
Starting T
J
G
≤ 150°C
≤ 8.0A, di/dt ≤ 100A/µs, V
= 25Ω, I
J
NOTES:
= 25°C, L = 16 mH
AS
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH
14.09 (.555)
13.47 (.530)
15.24 (.600)
14.84 (.584)
E XAMPLE :
= 8.0A. (See Figure 12)
2.87 (.113)
2.62 (.103)
3X
2.54 (.100)
1.40 (.055)
1.15 (.045)
2X
Note: "P" in assembly line
position indicates "Lead-Free"
T H IS IS AN IRF 1010
LOT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB LY L INE "C"
10.54 (.415)
10.29 (.405)
1
DD
2 3
≤ V
4
3X
(BR)DSS
0.36 (.014)
6.47 (.255)
6.10 (.240)
0.93 (.037)
0.69 (.027)
1.15 (.045)
4.06 (.160)
3.55 (.140)
MIN
3.78 (.149)
3.54 (.139)
,
M
- A -
B A M
Data and specifications subject to change without notice.
INT E R NAT IONAL
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
„
…
R E CT IF IE R
AS S E MB LY
L OT CODE
Pulse width ≤ 300µs; duty cycle ≤ 2%.
L OGO
C
as C
4.69 (.185)
4.20 (.165)
oss
eff. is a fixed capacitance that gives the same charging time
oss
while V
- B -
1.32 (.052)
1.22 (.048)
2.92 (.115)
2.64 (.104)
DS
3X
HEXFET
1- GATE
2- DRAIN
3- SOURCE
4- DRAIN
0.55 (.022)
0.46 (.018)
is rising from 0 to 80% V
LEAD ASSIGNMENTS
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
PAR T NU MB E R
IGBTs, CoPACK
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
TAC Fax: [phone]
DSS
www.vishay.com
11/03
8