IRF840APBF Vishay, IRF840APBF Datasheet - Page 4

• Manufacturer Part Number: IRF840APBF
• Description: N CHANNEL MOSFET, 500V, 8A, TO-220
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840APBF

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840APBF

Document Number: 91065
100000
10000
1000
100
100
0.1
10
10
1
1
0.2
1
V
T = 150 C
V DS , Drain-to-Source Voltage (V)
SD
J
0.5
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
°
10
Ciss
0.8
Coss
Crss
T = 25 C
J
f = 1 MHZ
100
°
1.1
V
GS
SHORTED
= 0 V
1000
1.4
100
0.1
20
16
12
10
8
4
0
1
10
0
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
7.4 A
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
°
G
10
, Drain-to-Source Voltage (V)
100
V
V
V
BY R
DS
DS
DS
= 400V
= 250V
= 100V
20
DS(on)
10us
100us
1ms
10ms
FOR TEST CIRCUIT
SEE FIGURE
1000
www.vishay.com
30
13
10000
40
4