N CHANNEL MOSFET, 1KV, 3.1A, TO-220

IRFBG30PBF

Manufacturer Part NumberIRFBG30PBF
DescriptionN CHANNEL MOSFET, 1KV, 3.1A, TO-220
ManufacturerVishay
TypePower MOSFET
IRFBG30PBF datasheets
 


Specifications of IRFBG30PBF

Transistor PolarityN ChannelContinuous Drain Current Id3.1A
Drain Source Voltage Vds1kVOn Resistance Rds(on)5ohm
Rds(on) Test Voltage Vgs10VThreshold Voltage Vgs Typ4V
Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs5 Ohm @ 1.9A, 10VDrain To Source Voltage (vdss)1000V (1kV)
Current - Continuous Drain (id) @ 25° C3.1AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs80nC @ 10VInput Capacitance (ciss) @ Vds980pF @ 25V
Power - Max125WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Minimum Operating Temperature- 55 C
ConfigurationSingleResistance Drain-source Rds (on)5 Ohm @ 10 V
Drain-source Breakdown Voltage1000 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current3.1 APower Dissipation125000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res5Ohm
Drain-source On-volt1kVGate-source Voltage (max)±20V
Drain Current (max)3.1AOutput Power (max)Not RequiredW
Frequency (max)Not RequiredMHzNoise FigureNot RequireddB
Power GainNot RequireddBDrain EfficiencyNot Required%
Operating Temp Range-55C to 150COperating Temperature ClassificationMilitary
MountingThrough HolePin Count3 +Tab
Package TypeTO-220ABLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names*IRFBG30PBF  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-220AB
G
D
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= 50 V, starting T
= 25 °C, L = 55 mH, R
DD
J
≤ 3.1 A, dI/dt ≤ 80 A/μs, V
≤ 600, T
c. I
SD
DD
J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91124
S11-0517-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
1000
• Repetitive Avalanche Rated
5.0
• Fast Switching
80
• Ease of Paralleling
10
• Simple Drive Requirements
42
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
S
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
TO-220AB
IRFBG30PbF
SiHFBG30-E3
IRFBG30
SiHFBG30
= 25 °C, unless otherwise noted)
C
SYMBOL
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
dV/dt
T
J
for 10 s
6-32 or M3 screw
= 25 Ω, I
= 3.1 A (see fig. 12).
g
AS
≤ 150 °C.
This datasheet is subject to change without notice.
IRFBG30, SiHFBG30
Vishay Siliconix
RoHS*
COMPLIANT
device
design,
low
on-resistance
LIMIT
UNIT
V
1000
DS
V
V
± 20
GS
3.1
I
D
2.0
A
I
12
DM
1.0
W/°C
E
280
mJ
AS
I
3.1
A
AR
E
13
mJ
AR
P
125
W
D
1.0
V/ns
, T
- 55 to + 150
stg
°C
d
300
10
lbf · in
1.1
N · m
www.vishay.com
www.vishay.com/doc?91000
Available
and
1

IRFBG30PBF Summary of contents

  • Page 1

    ... The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance S and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. TO-220AB IRFBG30PbF SiHFBG30-E3 IRFBG30 SiHFBG30 = 25 °C, unless otherwise noted) C SYMBOL ° ...

  • Page 2

    ... IRFBG30, SiHFBG30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... Document Number: 91124 S11-0517-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C This datasheet is subject to change without notice. IRFBG30, SiHFBG30 Vishay Siliconix www.vishay.com 3 www.vishay.com/doc?91000 ...

  • Page 4

    ... IRFBG30, SiHFBG30 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area This datasheet is subject to change without notice. ...

  • Page 5

    ... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91124 S11-0517-Rev. B, 21-Mar-11 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT Fig. 10a - Switching Time Test Circuit Fig. 10b - Switching Time Waveforms This datasheet is subject to change without notice. IRFBG30, SiHFBG30 Vishay Siliconix D.U. Pulse width ≤ ...

  • Page 6

    ... IRFBG30, SiHFBG30 Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Fig. 12b - Unclamped Inductive Waveforms Fig ...

  • Page 7

    ... Note a. V Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91124. ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...