IXFH26N50 IXYS SEMICONDUCTOR, IXFH26N50 Datasheet
IXFH26N50
Manufacturer Part Number
IXFH26N50
Description
N CH MOSFET, 500V, 26A, TO-247AD
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH21N50.pdf
(4 pages)
Specifications of IXFH26N50
Transistor Polarity
N Channel
Continuous Drain Current Id
26A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
200mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH26N50
Manufacturer:
IXYS
Quantity:
891
Part Number:
IXFH26N50
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXFH26N50Q
Manufacturer:
IXYS
Quantity:
6 500
Company:
Part Number:
IXFH26N50Q
Manufacturer:
IXFH
Quantity:
5 510
HiPerFET
Power MOSFETs
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
N-Channel Enhancement Mode
High dv/dt, Low t
© 1999 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
L
AR
J
stg
DSS
DGR
GS
GSM
D
GS(th)
d
DSS
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
S
C
C
C
C
C
J
J
J
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
150 C, R
I
DM
TM
rr
, di/dt 100 A/ s, V
GS
, HDMOS
, I
D
D
DC
= 250 A
= 4 mA
DSS
G
, V
= 2
DS
= 0
TM
GS
Family
= 1 M
DD
T
T
(T
J
J
J
= 25 C
V
= 125 C
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
= 25 C, unless otherwise specified)
DSS
,
JM
TO-204 = 18 g, TO-247 = 6 g
21N50
24N50
26N50
21N50
24N50
26N50
21N50
24N50
26N50
min.
500
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
typ.
500
500
104
300
150
300
20
30
21
24
26
84
96
21
24
26
30
5
max.
100
200
Nm/lb.in.
4
1 mA
V/ns
mJ
nA
W
C
C
C
C
V
V
V
V
A
A
A
A
A
A
A
A
A
A
V
V
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
• High power surface mountable package
• High power density
TO-247 AD (IXFH)
TO-268 (D3) Case Style
TO-204 AE (IXFM)
G = Gate,
S = Source,
rated
- easy to drive and to protect
power supplies
(isolated mounting screw hole)
500 V 21 A 0.25
500 V 24 A 0.23
500 V 26 A 0.20
t
V
DS (on)
rr
DSS
G
HDMOS
250 ns
D = Drain,
TAB = Drain
S
I
D25
TM
D
process
91525H (9/99)
R
G
DS(on)
(TAB)
(TAB)
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IXFH26N50 Summary of contents
Page 1
TM HiPerFET Power MOSFETs N-Channel Enhancement Mode TM High dv/dt, Low t , HDMOS rr Symbol Test Conditions 150 C DSS 150 C; R DGR J V ...
Page 2
... Typ. Max. 21N50 21 24N50 24 26N50 26 21N50 84 24N50 96 JM 26N50 104 1 250 125 C 400 125 125 4,835,592 4,850,072 IXFH24N50 IXFH26N50 IXFM24N50 IXFM26N50 IXFT24N50 IXFT26N50 TO-247 AD (IXFH) Outline Max Dim. Millimeter n s Min. Max 4.7 5.3 A 2.2 2. 2.2 2 1.0 1.4 b 1.65 2. 2.87 3.12 ...
Page 3
... IXFH24N50 IXFH26N50 IXFM24N50 IXFM26N50 IXFT24N50 IXFT26N50 Fig. 2 Input Admittance T = 25° 10V Volts GS Fig. 4 Temperature Dependence of Drain to Source Resistance I = 12A D -25 ...
Page 4
... Fig.10 Source Current vs. Source to Drain Voltage iss oss 5 C rss 0.00 0.001 0.01 Time - Seconds 4,835,592 4,881,106 4,850,072 4,931,844 IXFH24N50 IXFH26N50 IXFM24N50 IXFM26N50 IXFT24N50 IXFT26N50 DS(on) 10 100 500 V - Volts 125° 25°C J 0.25 0.50 0.75 1.00 1.25 1. Volt SD 0 5,017,508 ...