IXTT40N50L2 IXYS SEMICONDUCTOR, IXTT40N50L2 Datasheet
IXTT40N50L2
Specifications of IXTT40N50L2
Related parts for IXTT40N50L2
IXTT40N50L2 Summary of contents
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... DSS DS DSS 0.5 • 10V, I DS(on D25 © 2009 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH40N50L2 IXTQ40N50L2 IXTT40N50L2 Maximum Ratings 500 = 1MΩ 500 GS ±20 ± 540 -55 to +150 +150 -55 to +150 300 260 1.13/10 6.0 5.5 4.0 Characteristic Values Min ...
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... C Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ 100V 500 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTH40N50L2 IXTQ40N50L2 IXTT40N50L2 TO-247 (IXTH) Outline Max Terminals Gate Source nC Dim. Millimeter Min. Max. 0.23 °C ...
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... Normalized to I DS(on) vs. Junction Temperature 2.8 2 10V GS 2.4 2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTT40N50L2 20A Value D = 40A I = 20A D 75 100 125 150 75 100 125 150 IXYS REF: T_40N50L2(8R)01-20-09-A ...
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... IXTH40N50L2 IXTQ40N50L2 Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 250V 20A 10mA 100 150 200 250 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds IXTT40N50L2 40ºC J 25ºC 125º 300 350 400 450 0 ...
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... IXYS CORPORATION, All rights reserved = 25ºC 100 25µs 100µs 1ms 10ms 100ms DC 1000 IXTH40N50L2 IXTQ40N50L2 Fig. 14. Forward-Bias Safe Operating Area @ T = 75º Limit DS(on 150º 75ºC C Single Pulse 0 10 100 V - Volts DS IXTT40N50L2 25µs 100µs 1ms 10ms 100ms DC 1000 IXYS REF: T_40N50L2(8R)01-20-09-A ...