IXFH21N50 IXYS SEMICONDUCTOR, IXFH21N50 Datasheet
IXFH21N50
Manufacturer Part Number
IXFH21N50
Description
N CH MOSFET, 500V, 21A, TO-247AD
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH21N50.pdf
(4 pages)
Specifications of IXFH21N50
Transistor Polarity
N Channel
Continuous Drain Current Id
21A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
250mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH21N50
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH21N50
Manufacturer:
IXYS
Quantity:
35 500
Company:
Part Number:
IXFH21N50Q
Manufacturer:
IXYS
Quantity:
15 500
HiPerFET
Power MOSFETs
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
N-Channel Enhancement Mode
High dv/dt, Low t
© 1999 IXYS All rights reserved
DM
D25
AR
GSS
DSS
JM
L
AR
J
stg
DSS
DGR
GS
GSM
D
GS(th)
d
DSS
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
S
C
C
C
C
C
J
J
J
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
150 C, R
I
DM
TM
rr
, di/dt 100 A/ s, V
GS
, HDMOS
, I
D
D
DC
= 250 A
= 4 mA
DSS
G
, V
= 2
DS
= 0
TM
GS
Family
= 1 M
DD
T
T
(T
J
J
J
= 25 C
V
= 125 C
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
= 25 C, unless otherwise specified)
DSS
,
JM
TO-204 = 18 g, TO-247 = 6 g
21N50
24N50
26N50
21N50
24N50
26N50
21N50
24N50
26N50
min.
500
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
typ.
500
500
104
300
150
300
20
30
21
24
26
84
96
21
24
26
30
5
max.
100
200
Nm/lb.in.
4
1 mA
V/ns
mJ
nA
W
C
C
C
C
V
V
V
V
A
A
A
A
A
A
A
A
A
A
V
V
Features
• International standard packages
• Low R
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
• High power surface mountable package
• High power density
TO-247 AD (IXFH)
TO-268 (D3) Case Style
TO-204 AE (IXFM)
G = Gate,
S = Source,
rated
- easy to drive and to protect
power supplies
(isolated mounting screw hole)
500 V 21 A 0.25
500 V 24 A 0.23
500 V 26 A 0.20
t
V
DS (on)
rr
DSS
G
HDMOS
250 ns
D = Drain,
TAB = Drain
S
I
D25
TM
D
process
91525H (9/99)
R
G
DS(on)
(TAB)
(TAB)
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IXFH21N50 Summary of contents
Page 1
TM HiPerFET Power MOSFETs N-Channel Enhancement Mode TM High dv/dt, Low t , HDMOS rr Symbol Test Conditions 150 C DSS 150 C; R DGR J V ...
Page 2
... Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S) TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH21N50 IXFM21N50 Characteristic Values Min. Typ. 21N50 ...
Page 3
... GS 1 15V GS 1.1 1.0 0 Amperes D Fig. 5 Drain Current vs. Case Temperature 30 26N50 25 24N50 20 21N50 -50 - Degrees C C © 1999 IXYS All rights reserved IXFH21N50 IXFM21N50 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 -50 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 ...
Page 4
... D=0.02 0.01 D=0.01 Single pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH21N50 IXFM21N50 Fig.8 Forward Bias Safe Operating Area 100 Limited 0.1 1 Fig ...