IXFH24N50 IXYS SEMICONDUCTOR, IXFH24N50 Datasheet
IXFH24N50
Specifications of IXFH24N50
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IXFH24N50 Summary of contents
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TM HiPerFET Power MOSFETs N-Channel Enhancement Mode TM High dv/dt, Low t , HDMOS rr Symbol Test Conditions 150 C DSS 150 C; R DGR J V ...
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... 100 Note 1: Add "S" suffix for TO-247 SMD package option (ex: IXFH24N50S) TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: IXFH21N50 IXFM21N50 Characteristic Values Min ...
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... IXFH24N50 IXFH26N50 IXFM24N50 IXFM26N50 IXFT24N50 IXFT26N50 Fig. 2 Input Admittance T = 25° 10V Volts GS Fig. 4 Temperature Dependence of Drain to Source Resistance I = 12A D -25 ...
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... Fig.10 Source Current vs. Source to Drain Voltage iss oss 5 C rss 0.00 0.001 0.01 Time - Seconds 4,835,592 4,881,106 4,850,072 4,931,844 IXFH24N50 IXFH26N50 IXFM24N50 IXFM26N50 IXFT24N50 IXFT26N50 DS(on) 10 100 500 V - Volts 125° 25°C J 0.25 0.50 0.75 1.00 1.25 1. Volt SD 0 5,017,508 ...