IXFH32N50 IXYS SEMICONDUCTOR, IXFH32N50 Datasheet
IXFH32N50
Manufacturer Part Number
IXFH32N50
Description
MOSFET, N, TO-247
Manufacturer
IXYS SEMICONDUCTOR
Datasheet
1.IXFH30N50.pdf
(4 pages)
Specifications of IXFH32N50
Transistor Polarity
N Channel
Continuous Drain Current Id
32A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
150mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH32N50
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXFH32N50
Manufacturer:
IXYS
Quantity:
35 500
Part Number:
IXFH32N50
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
Company:
Part Number:
IXFH32N50Q
Manufacturer:
RENESAS
Quantity:
50 000
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
AS
AR
D
DSS
GS
GSM
DSS
GS(th)
DS(on)
d
T
T
T
I
Continuous
Transient
T
T
T
T
I
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
V
V
V
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
pulse width limited by T
S
D
J
J
J
C
C
C
C
C
GS
DSS
DS
GS(th)
GS
DS
GS
GS
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
£ 150°C, R
= 25°C
£ I
= 25°C to 150°C
= 25°C to 150°C; R
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
Test Conditions
Test Conditions
DM
temperature coefficient
temperature coefficient
GS
, di/dt £ 100 A/ms, V
, I
D
D
TM
DC
DSS
D
= 1 mA
= 4 mA
, V
rr
= 15A
G
, HDMOS
= 2 W
DS
= 0
GS
JM
= 1 MW
DD
TM
£ V
T
T
32N50
30N50
Family
J
J
DSS
= 25°C
= 125°C
,
(T
±30
30N50
32N50
30N50
32N50
30N50
32N50
J
= 25°C, unless otherwise specified)
IXFH/IXFT 30N50
IXFH/IXFT 32N50
±100
min.
200
500
2
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
-0.206
0.102
1.13/10
typ.
500
500
±20
120
128
360
150
300
30
32
1.5
V
30
32
45
5
6
0.15
0.16
max.
4
1
Nm/lb.in.
V/ns
%/K
%/K
mA
mJ
nA
mA
°C
°C
°C
°C
W
W
W
V
V
V
A
A
A
A
A
A
V
V
J
g
TO-247 AD (IXFH)
Features
•
•
•
•
•
•
Applications
•
•
•
•
•
•
Advantages
•
•
•
G = Gate,
S = Source,
TO-268 (D3) Case Style
t
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Diode
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
rr
500 V
500 V
V
£ 250 ns
G
DSS
DS (on)
S
HDMOS
D = Drain,
TAB = Drain
30 A
32 A
I
D25
TM
process
(TAB)
D (TAB)
97518H (6/99)
0.16 W
0.15 W
R
DS(on)
1 - 4
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IXFH32N50 Summary of contents
Page 1
TM HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low t , HDMOS rr Symbol Test Conditions 25°C to 150°C DSS 25°C to 150° DGR Continuous ...
Page 2
Symbol Test Conditions 0 D25 C iss MHz oss rss t d(on ...
Page 3
... Volts DS Figure 3. R normalized to 15A/25 DS(on) 2 10V GS 2.4 0 Tj=125 C 2.0 1.6 Tj=25 1.2 0 Amperes D Figure 5. Drain Current vs. Case Temperature 40 IXFH32N50 32 IXFH30N50 -50 - Degrees C C © 2000 IXYS All rights reserved vs 2.8 2.4 2.0 1 1.2 0 100 125 150 IXFH 30N50 IXFH 32N50 ...
Page 4
Figure 7. Gate Charge 14 12 Vds=300V Vds=300V I I =30A =30A =10mA =10mA 100 150 Gate Charge - nC Figure 9. Forward Voltage Drop of ...